Lateral ion implant straggle and mask proximity effect

Hook, T.B.; Brown, J.; Cottrell, P.E.; Adler, E.L.; Hoyniak, D.; Johnson, J. W.; Mann, R. W.

doi:10.1109/ted.2003.815371

Cited by 81 publications

(23 citation statements)

References 2 publications

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“…Both groups have the same fT × BV CEO figure of merit. This suggests that scattering effects from the resist edge as described in [4] increase the net collector doping in the case of the smaller LC gap. The LC post layout might be more sensitive to photolithography process variation and misalignment than the traditional device.…”

Section: B Experiments and Resultsmentioning

confidence: 95%

Integration of SiGe NPN devices with tunable collector profiles using a single mask

Hurwitz¹,

Preisler²,

Racanelli³

2009

2009 IEEE Bipolar/BiCMOS Circuits and Technology Meeting

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An alternate local collector masking scheme is demonstrated in 0.18µm SiGe BiCMOS technology. The method relies on a resist post in the emitter window to create a set of tunable breakdown devices with a single masking step.In initial experiments we have produced a continuum of devices with f T between 31 and 74GHz. The f T × BV CEO product and f MAX of these devices is comparable to those produced with traditional local collector implementation. The method could be combined with a collector-doping scalable model to provide additional design flexibility with minimal manufacturing costs. TCAD simulations are employed to study the use of high energies and tilt angle implants to partially penetrate the LC resist post over the emitter window. This alternative relaxes the lithography requirements of the LC post and supports its use with smaller emitter geometries.

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Section: B Experiments and Resultsmentioning

confidence: 95%

Integration of SiGe NPN devices with tunable collector profiles using a single mask

Hurwitz¹,

Preisler²,

Racanelli³

2009

2009 IEEE Bipolar/BiCMOS Circuits and Technology Meeting

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“…No latch up was observed in the RDP LIGBT below current density of 1700A/cm 2 in 200ns transmission line pulses (TLP) measurement. However, the mask proximity effect (MPE) during ion implantation [79] needed to be carefully considered when designing the RDP LIGBT. The process margin should also be well controlled to ensure V T would not be affected.…”

Section: Retrograded Channel Ligbtmentioning

confidence: 99%

A Review of techniques used in Lateral Insulated Gate Bipolar Transistor (LIGBT)

Tee¹

2012

IOSRJEEE

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“…Well-proximity effect is a well known cause of local layout dependent variation [22]. In deep well implants, dopant ions can scatter from the edge of the well masking photoresist layer and increase the surface implant dose in devices located near the edge of the well, resulting in a layout dependent V T offset.…”

Section: Systematic Vs Random Variationmentioning

confidence: 99%