J. Brown scite author profile

Lateral scattering of retrograde well implants is shown to have an effect on the threshold voltage of nearby devices. The threshold voltage of both NMOSFETs and PMOSFETs increases in magnitude for conventional retrograde wells, but for triple-well isolated NMOSFETs the threshold voltage decreases for narrow devices near the edge of the well. Electrical data, SIMS, and SUPREM4 simulations are shown that elucidate the phenomenon.

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PMOSFET layout dependency with embedded SiGe Source/Drain at POLY and STI edge in 32/28nm CMOS technology

Song

Liang

Onoda

et al. 2012

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A 3ns 32K bipolar RAM

Chan

Brown²,

Nijhuis³

et al. 1986

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Power management trends in portable consumer applications

Brown¹

2011

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Modeling the benefits of using a thick bottom oxide gated mosfet (WFET/sup TM/) with increased switching performance in the high side of a non-isolated buck converter

Brown¹

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Experiments on MOS devices at very low temperatures

Brown

Jordan²

1964

IEEE Trans. Electron Devices

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J. Brown

Modeling the switching performance of a MOSFET in the high side of a non-isolated buck converter

Lateral ion implant straggle and mask proximity effect

PMOSFET layout dependency with embedded SiGe Source/Drain at POLY and STI edge in 32/28nm CMOS technology

A 3ns 32K bipolar RAM

Power management trends in portable consumer applications

Modeling the benefits of using a thick bottom oxide gated mosfet (WFET/sup TM/) with increased switching performance in the high side of a non-isolated buck converter

Experiments on MOS devices at very low temperatures

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