Lateral coupling of InP/GaInAsP/InP structures by selective area MOMBE

Wachter, M.; Schöffel, U.; Schier, M.; Heinecke, H.

doi:10.1016/s0022-0248(96)01027-5

Cited by 10 publications

(1 citation statement)

References 24 publications

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“…In the last few years some groups have obtained promising results using low-pressure metalorganic vapor phase epitaxy (LP-MOVPE) [1] and chemical beam epitaxy (CBE) [2,3]. The latter CBE results are obtained by using a perpendicular group III injector instead of the usual tilted geometry.…”

Section: Introductionmentioning

confidence: 99%

Butt-coupling loss of 0.1 dB/interface in InP/InGaAs multiple-quantum-well waveguide-waveguide structures grown by selective area chemical beam epitaxy

Verschuren

Harmsma

Oei

et al. 1998

Semicond. Sci. Technol.

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The lateral coupling of waveguiding structures in both [011] and [011] directions is studied using embedded selective area epitaxy by Chemical Beam Epitaxy. All growth steps are carried out under the same growth conditions on (100) lnP substrates misoriented by 0.5 • towards (111)B. Both planar and selectively grown material exhibits bright luminescence and narrow PL line widths (8 meV FWHM at 4K), up to the lateral junction. Moreover, no degradation of the original material properties is observed after regrowth. SEM images show very flat layers and excellent lateral coupling for all four types of junctions. After reactive ion etching of waveguide ridges, the optical losses have been determined using a Fabry-Perot setup at 1530 nm (TE polarization). Values of 0.1 dB/interface with excellent uniformity are presented. From our results we conclude that by optimization of the sample preparation prior to regrowth, values of 0.1 dB/interface can be obtained reproducibly for both perpendicular coupling directions.

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Section: Introductionmentioning

confidence: 99%