Potential of MOMBE/CBE for the production of photonic devices in comparison with MOVPE

Veuhoff, E.

doi:10.1016/s0022-0248(98)00046-3

Cited by 12 publications

(2 citation statements)

References 57 publications

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“…Applied to III–V semiconductor deposition, CBE demonstrated a wide range of advantages − including easy deposition and doping of complex materials from various precursors, high composition and thickness uniformity even on large substrates, high precursor conversion rate, high growth rates, high reproducibility, compatibility with UHV characterization techniques, compatibility with laser beam structuring, and surface selective growth. Despite these advantages and the fabrication of devices, − the expected breakthroughs did not take place and industrial CBE equipment disappeared from the market. Today, III–V semiconductor synthesis with CBE is mainly performed for nanowires , or quantum dot deposition. , In parallel to the main work on III–V semiconductors materials, which require a particular chemistry based mainly on alkyl compounds and hydrides, attempts were made to extend the technology to organometallic precursors for other material deposition.…”

Section: Introductionmentioning

confidence: 99%

Geometry of Chemical Beam Vapor Deposition System for Efficient Combinatorial Investigations of Thin Oxide Films: Deposited Film Properties versus Precursor Flow Simulations

Wagner¹,

Sandu²,

Harada³

et al. 2016

ACS Comb. Sci.

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An innovative deposition system has been developed to construct complex material thin films from single-element precursors by chemical beam vapor deposition (CBVD). It relies on well distributed punctual sources that emit individually controlled precursor beams toward the substrate under high vacuum conditions combined with well designed cryo-panel surfaces that avoid secondary precursor sources. In this configuration the impinging flows of all precursors can be calculated at any substrate point considering the controlled angular distribution of the emitted beams and the ballistic trajectory of the molecules. The flow simulation is described in details. The major advantage of the deposition system is its ability to switch between several possible controlled combinatorial configurations, in which the substrate is exposed to a wide range of flow compositions from the different precursors, and a uniform configuration, in which the substrate is exposed to a homogeneous flow, even on large substrates, with high precursor use efficiency. Agreement between calculations and depositions carried out in various system configurations and for single, binary, or ternary oxides in mass transfer limited regime confirms that the distribution of incoming precursors on the substrate follows the theoretical models. Additionally, for some selected precursors and in some selected conditions, almost 100% of the precursor impinging on the substrate is incorporated to the deposit. The results of this work confirm the potentialities of CBVD both as a research tool to investigate efficiently deposition processes and as a fabrication tool to deposit on large surfaces.

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Section: Introductionmentioning

confidence: 99%

Geometry of Chemical Beam Vapor Deposition System for Efficient Combinatorial Investigations of Thin Oxide Films: Deposited Film Properties versus Precursor Flow Simulations

Wagner¹,

Sandu²,

Harada³

et al. 2016

ACS Comb. Sci.

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“…Consequently, this approach has also been applied to As sources and is now frequently used for AlGaAs growth. GaInAsP/GaAs diode lasers grown by solid-source MBE yield results comparable to those obtained using GSMBE [30].For reasons of completeness a further variant of MBE, Metalorganic MBE (MOMBE) [31], also named Chemical Beam Epitaxy (CBE) is mentioned. Here the supply of the group-V materials is as in GSMBE.…”

mentioning

confidence: 87%

Epitaxy of High-Power Diode Laser Structures

Weyers

Bhattacharya

Bugge

et al.

Topics in Applied Physics

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Abstract. Excellent semiconductor-material quality is an essential prerequisite for the fabrication of high-power diode lasers and laser bars. This review discusses issues in the epitaxial growth of semiconductor materials and layer sequences that form the basis for diode lasers. First, an overview of the material systems used for diode lasers with emission wavelengths extending from the far-infrared to the blue range of the spectrum is presented. The following sections then concentrate on materials that have, until now, been used for high-power diode lasers: the GaAs-based, and to a lesser extent also the InP-based members of the III-V family (Al, Ga, In)(As, P). Different growth techniques are described, with stress on the two modern methods -Molecular-Beam Epitaxy (MBE) and Metalorganic Vapor-Phase Epitaxy (MOVPE) -that are currently used for the growth of diode-laser structures. An attempt is made to compare the relative strengths and weaknesses of these epitaxial growth techniques.The issues of purity, ordering (observed for example in GaInP), phase separation (occurring for certain compositions of GaInAsP) and p-and n-type doping for the constituent III-V materials found in high-power diode lasers are discussed in detail. The sequential growth of layers of controlled thicknesses, composition and doping profiles to build up the desired heterostructures requires careful optimization of the growth processes, especially at the heterointerfaces. While most of the layers within the heterostructure are lattice-matched to the underlying substrate, the active, light-emitting layer usually consists of one or more strained quantum wells (QWs). The advantages of such strained layers along with the corresponding implications from the growth viewpoint are highlighted. Finally, an overview of the different material combinations used and the state-of-the-art for 600-1060 nm emitting GaAs-based diode lasers is presented.The first reports on semiconductor-diode lasers [1] date back to 1962. Since then these devices have been realized over a wide range of emission wavelengths in a variety of material systems. Since the first demonstration of the semiconductor laser, threshold-current densities have fallen by more than three orders of magnitude, due to various breakthroughs made possible primarily by advancements in crystal-growth technologies. Improvements in Liquid-Phase Epitaxy (LPE) in the early 1970s enabled the realization of the Double Heterostructure (DH) concept and Continuous-Wave (CW) operation of GaAs/AlGaAs lasers, while progress in growth technologies like MolecularBeam Epitaxy (MBE) and Metalorganic Vapor-Phase Epitaxy (MOVPE) were responsible for the development of quantum-well lasers, which are the basis of most high-power diode lasers today. This review describes and compares the different epitaxial growth methods used to fabricate diode lasers in various material systems and examines important growth-related issues such as doping, ordering and homogeneity that are essential for the successful fabrication of ...

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Surfaces and Films

Resch¹,

Koel²

2003

AIP Physics Desk Reference

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Potential of MOMBE/CBE for the production of photonic devices in comparison with MOVPE

Cited by 12 publications

References 57 publications

Geometry of Chemical Beam Vapor Deposition System for Efficient Combinatorial Investigations of Thin Oxide Films: Deposited Film Properties versus Precursor Flow Simulations

Geometry of Chemical Beam Vapor Deposition System for Efficient Combinatorial Investigations of Thin Oxide Films: Deposited Film Properties versus Precursor Flow Simulations

Epitaxy of High-Power Diode Laser Structures

Surfaces and Films

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