Lateral confined epitaxy of GaN layers on Si substrates

Zamir, S.; Meyler, B.; Salzman, J.

doi:10.1016/s0022-0248(01)01247-7

Cited by 34 publications

(22 citation statements)

References 5 publications

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“…Thus, it is likely that a poor material quality is the reason for cracks in their experiments. They also observed an enhancement in PL intensity for smallersized fields and correlated this with an enhanced quality of the layer [76,77].…”

Section: Thick Layers and Strain Engineeringmentioning

confidence: 76%

Metalorganic chemical vapor phase epitaxy of gallium‐nitride on silicon

Dadgar

Strittmatter

Bläsing

et al. 2003

phys. stat. sol. (c)

125

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GaN growth on Si is very attractive for low-cost optoelectronics and high-frequency, high-power electronics. It also opens a route towards an integration with Si electronics. Early attempts to grow GaN on Si suffered from large lattice and thermal mismatch and the strong chemical reactivity of Ga and Si at elevated temperatures. The latter problem can be easily solved using gallium-free seed layers as nitrided AlAs and AlN. The key problem for device structure growth on Si is the thermal mismatch leading to cracks for layer thicknesses above 1 µm. Meanwhile, several concepts for strain engineering exist as patterning, Al(Ga)N/GaN superlattices, and low-temperature (LT) AlN interlayers which enable the growth of device-relevant GaN thicknesses. The high dislocation density in the heteropitaxial films can be reduced by several methods which are based on lateral epitaxial overgrowth using ex-situ masking or patterning and by in-situ methods as masking with monolayer thick SiN. With the latter method in combination with strain engineering by LT-AlN interlayers dislocation densities around 109 cm -2 can be achieved for 2.5 µm thick device structures.

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Section: Thick Layers and Strain Engineeringmentioning

confidence: 76%

Metalorganic chemical vapor phase epitaxy of gallium‐nitride on silicon

Dadgar

Strittmatter

Bläsing

et al. 2003

phys. stat. sol. (c)

125

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show abstract

“…Thus, it is likely that a poor material quality is the reason for cracks in their experiments. They also observed an enhancement in PL intensity for smaller-sized fields and correlated this with an enhanced quality of the layer [40,41].…”

Section: Introductionmentioning

confidence: 77%

GaN-Based Devices on Si

Krost¹,

Dadgar²

2002

phys. stat. sol. (a)

179

111

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Nowadays, GaN‐based devices are usually grown on sapphire or silicon‐carbide substrates. These are either insulating or very expensive and not available in large diameter. A well‐conducting low‐cost alternative is silicon also enabling the integration of optoelectronics or high‐power electronics with Si‐based electronics. The main problem limiting a fast progress of GaN growth on silicon is the thermal mismatch of GaN and Si leading to cracks even below device‐relevant layer thicknesses. In the last few years, since the first demonstration of a molecular beam epitaxy grown GaN‐based light emitting diode on Si in 1998 the activities in research of GaN on Si increased dramatically. Meanwhile, several concepts to lower stress, avoid cracks, and improve the material quality exist. Meanwhile the material quality has improved significantly and is about as good as on sapphire so that it is only a question of time until GaN‐based devices on Si come into market. This article gives a review on the latest developments in group‐III nitride growth on Si by metal organic vapor phase epitaxy.

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“…Nevertheless, promising results on GaN devices grown on silicon have been reported. [2][3][4] Several methods have been proposed to prevent cracking of GaN layers grown on silicon, e.g., by applying patterned substrates 5,6 or inserting lowtemperature (LT) AlN layers. 7,8 GaN layers grown on patterned silicon substrates offer free facets to release the large tensile stress from thermal mismatch, while LT AlN interlayers may decouple the GaN cap layers from the bottom layers to avoid the tensile stress imposed by the silicon substrate.…”

Section: Introductionmentioning

confidence: 99%

Flat GaN epitaxial layers grown on Si(111) by metalorganic vapor phase epitaxy using step-graded AlGaN intermediate layers

Cheng

Leys

Degroote

et al. 2006

J. Electron. Mater.

125

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In this work, we report on the growth by metalorganic vapor phase epitaxy (MOVPE) of GaN layers on AlN/Si(111) templates with step-graded AlGaN intermediate layers. First, we will discuss the optimization of the AlN/Si(111) templates and then we will discuss the incorporation of step-graded AlGaN intermediate layers. It is found that the growth stress in GaN on high-temperature (HT) AlN/Si(111) templates is compressive, although, due to relaxation, the stress we have measured is much lower than the theoretical value. In order to prevent the stress relaxation, step-graded AlGaN layers are introduced and a crack-free GaN epitaxial layer of thickness .1 mm is demonstrated. Under optimized growth conditions, the total layer stack, exceeding 2 mm in total, is kept under compressive stress, and the radius of the convex wafer bowing is as large as 119 m. The crystalline quality of the GaN layers is examined by highresolution x-ray diffraction (HR-XRD), and the full-width-at-half maximums (FWHMs) of the x-ray rocking curve (0002) v-scan and (ÿ1015) v-scan are 790 arc sec and 730 arc sec, respectively. It is found by cross-sectional transmission electron microscopy (TEM) that the step-graded AlGaN layers terminate or bend the dislocations at the interfaces.

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Lateral confined epitaxy of GaN layers on Si substrates

Cited by 34 publications

References 5 publications

Metalorganic chemical vapor phase epitaxy of gallium‐nitride on silicon

Metalorganic chemical vapor phase epitaxy of gallium‐nitride on silicon

GaN-Based Devices on Si

Flat GaN epitaxial layers grown on Si(111) by metalorganic vapor phase epitaxy using step-graded AlGaN intermediate layers

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