Lateral charge transport from heavy-ion tracks in integrated circuit chips

Zoutendyk, J. A.; Schwartz, H. R.; Nevill, Leland R.

doi:10.1109/23.25513

Cited by 38 publications

(7 citation statements)

References 9 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Both of these techniques cause undesired system complexity which can only worsen as memory density increases. Previously, investigations of MBU in Si DRAMS have shown good agreement between experimental results and 2D cylindrically-symmetric numerical simulations [22,23]. In this paper we use full 3D mixed-mode simulation of a double SRAM cell structure to study the hit-location dependence of MBU in a model technology.…”

Section: Single-event Multiple-bit Upsetmentioning

confidence: 82%

Three-dimensional simulation of charge collection and multiple-bit upset in Si devices

Dodd

Sexton

Winokur

1994

IEEE Trans. Nucl. Sci.

106

View full text Add to dashboard Cite

show abstract

Section: Single-event Multiple-bit Upsetmentioning

confidence: 82%

Three-dimensional simulation of charge collection and multiple-bit upset in Si devices

Dodd

Sexton

Winokur

1994

IEEE Trans. Nucl. Sci.

106

View full text Add to dashboard Cite

show abstract

“…Demonstrating the effects of irradiation on the material is important for determining the properties of the materials to be used in such environments. Electron radiation is known to cause more damage than X-rays and gamma rays [3][4][5].…”

Section: Introductionmentioning

confidence: 99%

Electron irradiation degradation on Silicon Schottky diode interface

Uğurel

Aydoğan

2023

Preprint

View full text Add to dashboard Cite

Au/n-Si/Au-Sb Schottky diode was fabricated, and electron irradiation was applied to the diode at 25 gray and 50 gray doses. The effects of irradiation on the electrical characteristics of the 450 oC annealed diode were analyzed by means of current-voltage (I-V), capacitance-voltage (C-V), conductance-voltage (G-V) and capacitance-frequency (C-f) measurements before and after irradiation. With increasing irradiation, changes were observed in the ideality factor, barrier height, series resistance, dielectric constant and diffusion potential values depending on the dose used. The n value was found to be 1.231, 1.306, and 1.350 before irradiation, after 25-gray, and after 50-gray irradiation, respectively. The Φb before irradiation was 0.742 eV. Depending on 25 and 50 gray irradiations, it was calculated as 0.768 eV and 0.761 eV, respectively. In addition, there was a decrease in leakage current by irradiation. Depending on the increasing dose, while the capacitance and donor concentration of the diode decreased, there was an increase in the diffusion potential and Fermi energy level. It has been observed that the diode deviates from ideality due to defects in the diode interface depending on irradiation. It has been observed that electron irradiation causes changes in the electrical properties of the Au/n-Si/Au-Sb Schottky diode.

show abstract

“…However, the experimental results do not confirm this. A single ion could upset multiple bits in DRAM and SRAM because of lateral charge transport [6], [7]. This phenomenon may also occur in multiple nodes of an SEU hardened cell.…”

Section: Introductionmentioning

confidence: 99%

3D Simulation of Charge Collection and MNU in Highly-Scaled SRAM Design

Liu

Zhao

Yue

2009

2009 Fifth International Joint Conference on INC, IMS and IDC

View full text Add to dashboard Cite

Three-dimensional simulation is used to explore the new charge-collection mechanisms in highly-scaled MOSEFT. The results show the charge collection with the parasitic bipolar conduction can cause an increased SEU sensitivity. Then the problem of multiple-node upset in a 0.18 m DICE cell is studied .The results show not only the transient floating node and charge lateral diffusion are the key reasons for MNU, and the new charge-collection mechanisms in highly-scaled circuit become another reason.

show abstract

Lateral charge transport from heavy-ion tracks in integrated circuit chips

Cited by 38 publications

References 9 publications

Three-dimensional simulation of charge collection and multiple-bit upset in Si devices

Three-dimensional simulation of charge collection and multiple-bit upset in Si devices

Electron irradiation degradation on Silicon Schottky diode interface

3D Simulation of Charge Collection and MNU in Highly-Scaled SRAM Design

Contact Info

Product

Resources

About