Lateral and vertical power transistors in GaN and Ga
            <sub>2</sub>
            O
            <sub>3</sub>

Hilt, Oliver; Bahat‐Treidel, Eldad; Wolf, Mihaela; Kuring, Carsten; Tetzner, Kornelius; Yazdani, Hossein; Wentzel, Andreas; Würfl, Joachim

doi:10.1049/iet-pel.2019.0059

Cited by 18 publications

(2 citation statements)

References 43 publications

(68 reference statements)

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“…Over the past few decades, although GaN and SiC power devices have gradually replaced Si-based power devices in many applications, the industrial pain point of large-scale and high-cost GaN and SiC substrates is the most critical challenge for achieving high-performance power devices [32][33][34]. The high-quality, large-size and low-cost Ga 2 O 3 substrates enable more promising opportunities for the semiconductor power device market [35,36].…”

Section: Introductionmentioning

confidence: 99%

A review of gallium oxide-based power Schottky barrier diodes

Lü

Yan

et al. 2022

J. Phys. D: Appl. Phys.

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Gallium oxide (Ga2O3) is a representative of ultra-wide bandgap semiconductor, with a bandgap of about 4.9 eV. In addition to a large dielectric constant, excellent physical and chemical stability, Ga2O3 has a breakdown electric field strength of more than 8 MV/cm, which is 27 times than that of Si and about twice larger than that of SiC and GaN. It is guaranteed that Ga2O3 has irreplaceable applications in ultra-high power (1-10 kW) electronic devices. Unfortunately, due to the difficulty of p-type doping of Ga2O3, only unipolar Ga2O3power Schottky diodes are feasible, but substantial progress has been made in recent years. In this article, we review the advanced progresses and important achievements of the state-of-the-arts Ga2O3 based power SBDs, and provide staged guidance for the further development of Ga2O3 power devices. The multiple type of device architectures, including basic structure, edge terminal processing, field plated, trench and heterojunction p-n structure, will be

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Section: Introductionmentioning

confidence: 99%

A review of gallium oxide-based power Schottky barrier diodes

Lü

Yan

et al. 2022

J. Phys. D: Appl. Phys.

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“…Integrating a high-power β-Ga 2 O 3 module and an efficient β-Ga 2 O 3 logic circuit is desirable for the miniaturization of power electronics modules. So far, highpower MOSFETs have been extensively researched [4], [5]. β-Ga 2 O 3 metal-semiconductor field-effect transistors [6] and vertical and lateral MOSFETs have also been reported [7], [8].…”

mentioning

confidence: 99%

β-Ga₂O₃ Pseudo-CMOS Monolithic Inverters

Chettri,

Mainali,

Amruth

et al. 2023

IEEE Trans. Electron Devices

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In this article, we report on the fabrication of β-Ga 2 O 3 pseudo-CMOS inverters using enhancementmode (E-mode) β-Ga 2 O 3 single-finger (S F ) and multifinger (M F ) thin-film transistors (TFTs). Initially, single-stage monolithic inverter ICs were fabricated using TFTs having threshold voltages V SF th = 0.6 V and V MF th = 0.1 V. However, the single-stage inverter yielded poorer gain (4.50 at V DD , supply voltage = 3 V). Alternatively, a pseudo-CMOS (double-stage) inverter was designed and fabricated, yielding a maximum gain of 6.45 but with a poor noise margin (NM). To improve the NM, the pseudo-CMOS circuit was tested using TFTs having higher threshold voltages (V SF th = 1.85 V and V MF th = 1.75 V). Notably, the optimized pseudo-CMOS circuit exhibited the least peak power consumption (0.2 nW) and the maximum gain of 8 at V DD = 3 V. The monolithically integrated devices' performance and IC highlight this technology's remarkable potential for application in the emerging sector of power electronics and extreme-environment electronics.Index Terms-β-Ga 2 O 3 heteroepitaxy, β-Ga 2 O 3 thin-film transistors (TFTs), inverter logic circuits, pseudo-CMOS. I. INTRODUCTIONβ -Ga 2 O 3 , an emerging ultrawide-bandgap (UWBG) material with a bandgap of 4.8 eV and a large breakdown field of 8 MV/cm, is a promising candidate for high-power electronics [1]. Furthermore, the availability of high-quality β-Ga 2 O 3 substrates promoted the entry of β-Ga 2 O 3 electronics into the market [2]. In addition to power electronics, UWBG CMOS circuits are highly desirable for extreme-environment

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Simulation Study of Aluminum Nitride TrenchFETs with Polarization‐Induced Doping

Faber,

Römer,

Witzigmann

2024

Physica Status Solidi (a)

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Aluminum nitride (AlN) possesses a high critical electric field, allowing for thinner drift regions and lower resistances compared with current materials used for power semiconductor devices. However, high activation energies of impurity dopants like magnesium or silicon and high contact resistances impede the application of AlN for typical device concepts such as TrenchFET. This article aims to develop and investigate novel vertical device structures using an AlN drift region. To evade the aforementioned issues, polarization‐induced doping is applied to generate an effective charge concentration and to accomplish less resistive ohmic contacts.

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Lateral and vertical power transistors in GaN and Ga ₂ O ₃

Cited by 18 publications

References 43 publications

A review of gallium oxide-based power Schottky barrier diodes

A review of gallium oxide-based power Schottky barrier diodes

β-Ga₂O₃ Pseudo-CMOS Monolithic Inverters

Simulation Study of Aluminum Nitride TrenchFETs with Polarization‐Induced Doping

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Lateral and vertical power transistors in GaN and Ga 2 O 3

Cited by 18 publications

References 43 publications

A review of gallium oxide-based power Schottky barrier diodes

A review of gallium oxide-based power Schottky barrier diodes

β-Ga2O3 Pseudo-CMOS Monolithic Inverters

Simulation Study of Aluminum Nitride TrenchFETs with Polarization‐Induced Doping

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Product

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Lateral and vertical power transistors in GaN and Ga ₂ O ₃

β-Ga₂O₃ Pseudo-CMOS Monolithic Inverters