A review of gallium oxide-based power Schottky barrier diodes

Abstract

Gallium oxide (Ga2O3) is a representative of ultra-wide bandgap semiconductor, with a bandgap of about 4.9 eV. In addition to a large dielectric constant, excellent physical and chemical stability, Ga2O3 has a breakdown electric field strength of more than 8 MV/cm, which is 27 times than that of Si and about twice larger than that of SiC and GaN. It is guaranteed that Ga2O3 has irreplaceable applications in ultra-high power (1-10 kW) electronic devices. Unfortunately, due to the difficulty of p-type doping of Ga2O3, only unipolar Ga2O3power Schottky diodes are feasible, but substantial progress has been made in recent years. In this article, we review the advanced progresses and important achievements of the state-of-the-arts Ga2O3 based power SBDs, and provide staged guidance for the further development of Ga2O3 power devices. The multiple type of device architectures, including basic structure, edge terminal processing, field plated, trench and heterojunction p-n structure, will be

Advances in the optical and electronic properties and applications of bismuth-based semiconductor materials

“…2,3 To address these limitations, much efforts have been exerted on exploring various new semiconductor materials, such as InSe, 4 TiO 2 , 5 and Ga 2 O 3 . 6 Nonetheless, these alternatives also have inherent drawbacks that hinder their applications in optoelectronics. For example, two-dimensional semiconductor materials often exhibit unstable lattice structures 7 and organic semiconductors suffer from low crystallinity, making it challenging to control their morphologies and sizes.…”

Surface Adsorption and Air Damping Behavior of β‐Ga2O3 Nanomechanical Resonators

“…An emerging ultrawide bandgap (UWBG) semiconductor material with a bandgap of 4.5-4.9 eV, [1,2] beta gallium oxide (𝛽-Ga 2 O 3 ) has spurred extensive research interests as a promising DOI: 10.1002/admt.202301356 candidate for future high-power electronics and high-voltage radio frequency (RF) applications thanks to its high electric breakdown field (up to E br = 8MV/cm theoretically). [3][4][5][6][7][8][9][10] In addition, the wide bandgap of 𝛽-Ga 2 O 3 perfectly aligns with the cutoff wavelength of solar-blind regime, [11,12] which makes it a promising candidate for next-generation solar-blind ultraviolet (SBUV) optoelectronics. [11][12][13] Beyond the appealing electronic and optoelectronic properties, 𝛽-Ga 2 O 3 also exhibits excellent mechanical properties (e.g., Young's modulus E Y ≈ 260 GPa), which holds strong promise as a structural material for making compelling micro/nanoelectromechanical systems (MEMS/NEMS) and innovative transducers.…”

Investigation of high-performance Schottky diodes on a Ga2O3 epilayer using Cu with high barrier height, high temperature stability and repeatability

“…Today, β-Ga 2 O 3 , due to its ultrawide bandgap of ∼4.9 eV, high electric field strength of ∼8 MV cm −1 , and extremely high Baliga and Johnson figures of merit compared to other wide bandgap semiconductor materials, such as SiC and GaN, with high thermal and chemical stability, is emerging as a promising candidate for power device applications [1][2][3][4][5][6][7][8][9][10]. To date, several authors have extensively studied Schottky barrier diodes (SBDs), field effect transistors (FETs), and solar blind photodetectors based on β-Ga 2 O 3 due to the availability and ease of growth of high-quality single crystal substrates, homoepitaxy, and heteroepitaxy thin films via various meltgrowth and thin-film growth techniques [3,[11][12][13][14][15][16][17][18][19][20]. SBDs and FETs based on β-Ga 2 O 3 with breakdown voltages greater than 1 kV have been demonstrated [21].…”