Lasing of whispering-gallery modes in asymmetric waveguide GaInP micro-disks with InP quantum dots

Lasing of InP/AlInAs quantum dots in AlInAs microdisk cavity

“…The β factor obtained in this work (0.23) is similar to that (0.195) obtained for InP/GaInP QD MDs prepared by wet etching [15] but much lower than that (0.8) for InP/GaInP QD MDs prepared by ICP-RIE etching [16]. Since wet etch InP/GaInP QD have lateral size ~20 nm we suggest that in our structures the emission occurs through "small" QDs formed at InP/InAlAs interface [17].…”

Molecular States of Electrons: Emission of Single Molecules in Self-Organized InP/GaInP Quantum Dots

“…The QDs were grown at 725 o C by depositing 7 monolayers (ML) of InP (Vinokurov et al,. 1999;Chu et al, 2009,). We studied the structures with uncapped dots and structures having GaInP cap layer thickness 5, 20, 40 and 60 nm.…”

Lasing of whispering‐gallery modes in GaInP waveguide micro‐discs and rings with InP quantum dots

“…Using micro-laser theory [10] we fitted the I-P eff curves for our InP/GaInP WGM cavities as described in [6]. The fitting curves are presented in Fig.…”

“…Recently, we reported fabrication and room temperature lasing of GaInP MDs (quality factors ~5×10 4 ) with embedded InP QDs [6]. High emission efficiency provided by the large size (~100 nm), and low density (~10 9 cm -2 ) results in few or even single dot lasing of such MDs at room temperature with thresholds below 10 μW.…”

“…2 Experimental details Our MD and MR cavities were prepared from a 150 nm thick GaInP waveguide structure with embedded self-organized InP quantum dots (QDs) grown by Metal-Organic Chemical Vapor Deposition (MOCVD) as was described in [6]. The cavities were fabricated using electron beam lithography (EBL) and inductively-coupled plasma reactive ion etching (ICP-RIE) by using a wet oxidation (WO) technique.…”