Lasing of InP/AlInAs quantum dots in AlInAs microdisk cavity

Abstract

Abstract. AlInAs microdisk cavities having quality factor Q ~ 15 000 were fabricated from lattice-matched InP/AlInAs (interface/aggregation) quantum dot (QD) structures using wet chemical etching. The QD emission coupled to whispering gallery modes was observed at spectral range 920 -1000 nm at temperatures of 10 -160 K. The laser generation with threshold power density of 50 W/cm 2 at T = 10 K was observed under optical pumping. It was found that the spontaneous emission coupling factor β equals 0.23 for these microdisks. The low temperature lasing operation and the small coupling factors observed suggest the existence of small QDs formed at the InP/InAlAs interface as the main active elements.