Lasing of whispering‐gallery modes in GaInP waveguide micro‐discs and rings with InP quantum dots

Abstract

Whispering‐gallery‐mode (WGM) GaInP micro‐disc (MD) and micro‐ring (MR) resonators (diameters D=1‐3 mm, quality factors Q up to 5×103) with embedded InP quantum dots (size/density ∼100 nm/∼109cm‐2, emission range 720‐770 nm) have been fabricated using a wet oxidation technique. Ultralow (sub‐nanoWatt) lasing thresholds for a single InP quantum dot have been demonstrated for these resonators at 15 K under optical pumping. Observed thresholds are two orders of magnitude lower than for single InAs QD lasing (M. Nomura et al., Opt. Express 17, 15975 (2009) [1]). (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

Excitonic lasing of strain-free InP(As) quantum dots in AlInAs microdisk

“…Varying β near value of 0.2, obtained from time resolved measurements, we found β=0. 23 and ξ=8 using expression (2) to fit the experimental data in Fig.4a.…”

Лазерная генерация в микродисках с активной областью на основе решеточно-согласованных InP/AlInAs наноструктур

“…Так, можно ожидать, что для резонаторов, активная область которых содержит квантовые точки большого размера, будет наблюдаться низкий порог генерации в силу большего перекрытия с полем лазерной МШГ. Проведенные эксперименты по исследованию микро-дисков с самоорганизованными InP/GaInP квантовыми точками, имеющими большой размер (∼ 100 nm) и малую плотность (∼ 10 9 cm −2 ), подтверждают данную гипотезу [9], порог лазерной генерации, достигнутый на этом объекте, является наименьшим, и по абсолютной величине составляет ∼ 1 nW (при температуре 15 K).…”

Lasing of InP/AlInAs quantum dots in AlInAs microdisk cavity

“…Whispering gallery mode (WGM) semiconductor microdisk (MD) cavities with embedded quantum dots (QDs) represent modern nano-photonic platform for the realization of low-threshold lasers [1], single photon sources [2] and experiments on cavity quantum electrodynamics [3] and quantum optics [4]. For these cavities which have sizes of few micrometers and quality factors Q from 10 3 -10 5 , lasing under optical pumping from cryogenic to room temperatures was demonstrated in the spectral range 0.32 -1.3 μm using InGaAs/GaAs [5], InP/GaInP [1], CdSe/ZnSe [6] and GaN/AlN [7] QD systems having a type-I band alignment.…”

“…For these cavities which have sizes of few micrometers and quality factors Q from 10 3 -10 5 , lasing under optical pumping from cryogenic to room temperatures was demonstrated in the spectral range 0.32 -1.3 μm using InGaAs/GaAs [5], InP/GaInP [1], CdSe/ZnSe [6] and GaN/AlN [7] QD systems having a type-I band alignment. Recently MD lasers with GaAs/GaSb [8] QDs having a band alignment type-II were also reported.…”