Excitonic lasing of strain-free InP(As) quantum dots in AlInAs microdisk

Abstract

Formation, emission, and lasing properties of strain-free InP(As)/AlInAs quantum dots (QDs) embedded in AlInAs microdisk (MD) cavity were investigated using transmission electron microscopy and photoluminescence (PL) techniques. In MD structures, the QDs have the nano-pan-cake shape with the height of similar to 2 nm, the lateral size of 20-50 nm, and the density of similar to 5-10(9) cm(-2). Their emission observed at similar to 940 nm revealed strong temperature quenching, which points to exciton decomposition. It also showed unexpected type-I character, indicating In-As intermixing as confirmed by band structure calculations. We observed lasing of InP(As) QD excitons into whispering gallery modes in MD having the diameter of similar to 3.2 lm and providing a free spectral range of similar to 27 nm and quality factors up to Q similar to 13 000. Threshold of similar to 50 W/cm(2Y) and spontaneous emission coupling coefficient of similar to 0.2 were measured for this MD-QD system. Published by AIP Publishing

Room-temperature optically pumped InAs/GaAs quantum dots microdisk lasers on SiO2/Si chip

“…3(b), a double logarithmic scale L-L curve for an emission peak of 1181.72 nm is shown, clearly exhibiting a kind of "S-shaped" property. This result verifies a transition from the spontaneous to stimulated emissions [20][21][22] . The derived quality factor (Q = λ/Δλ) of the microdisk studied is 2813 according to its full width at half maximum (FWHM) of 0.42 nm at a wavelength of 1181.72 nm when the pump power (~140 μW) is below the lasing threshold power.…”

An All‐Colloidal and Eco‐Friendly Quantum‐Dot Laser

“…[8,9] However, all of these achievements are founded on the heavy-metal-contained QDs (e.g., CdSe), which may have the risks to the human kidneys and nervous systems, thus limiting their wide applications in daily life. [10] A plenty of eco-friendly QDs have been explored as the alternative gain media, such as InP, AgInS 2, and CuInS 2 , while none of them can fulfil the criteria of low pump threshold, large gain coefficient, and high fatigue resistance that are comparable to those of the CdSe QDs, [11][12][13][14][15] due to the intrinsically ill-suited electronic structures, nonstoichiometric trapping states and the dominant sub-bandgap transitions.…”