Lasing in GaN microdisks pivoted on Si

Choi, H. W.; Hui, Kwun Nam; Lai, P. T.; Chen, P.; Zhang, X. H.; Tripathy, S.; Teng, Jinghua; Chua, Soo Jin

doi:10.1063/1.2392673

Cited by 87 publications

(47 citation statements)

References 15 publications

(10 reference statements)

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“…Similar undercut microdisk structures have also been demonstrated by controlled wet-etch removal of the underlying Si substrate using GaN-on-Si materials. 12,13 There also are many other studies on GaN WGM microcavities based on self-assembled micro/ nano crystals using bottom-up methods, including microscale pyramids, hexagonal disks, and pillars. [14][15][16] However, it is difficult to achieve precise control over the locations, morphologies, dimensions, and uniformities of these microstructures during growth.…”

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confidence: 99%

GaN hemispherical micro-cavities

Zhang

Cong

Wang

et al. 2016

Applied Physics Letters

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GaN-based micro-dome optical cavities supported on Si pedestals have been demonstrated by dry etching through gradually shrinking microspheres followed by wet-etch undercutting. Optically pumped whispering-gallery modes (WGMs) have been observed in the near-ultraviolet within the mushroom-like cavities, which do not support Fabry-Pérot resonances. The WGMs blue-shift monotonously as the excitation energies are around the lasing threshold. Concurrently, the mode-hopping effect is observed as the gain spectrum red-shifts under higher excitations. As the excitation energy density exceeds ∼15.1 mJ/cm2, amplified spontaneous emission followed by optical lasing is attained at room temperature, evident from a super-linear increase in emission intensity together with linewidth reduction to ∼0.7 nm for the dominant WGM. Optical behaviors within these WGM microcavities are further investigated using numerical computations and three-dimensional finite-difference time-domain simulations.

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confidence: 99%

GaN hemispherical micro-cavities

Zhang

Cong

Wang

et al. 2016

Applied Physics Letters

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“…visible to UV wavelengths [12][13][14][15] . An outstanding challenge in achieving coupled QDcavity systems is the need to realize both spatial and frequency resonance of QD to cavity modes.…”

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A full free spectral range tuning of p-i-n doped gallium nitride microdisk cavity

Niu

Liu

Aharonovich

et al. 2012

Applied Physics Letters

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Effective, permanent tuning of the whispering gallery modes (WGMs) of p-i-n doped GaN microdisk cavity with embedded InGaN quantum dots over one free spectral range is successfully demonstrated by irradiating the microdisks with a ultraviolet laser (380nm) in DI water. For incident laser powers between 150 and 960 nW, the tuning rate varies linearly. Etching of the top surface of the cavity is proposed as the driving force for the observed shift in WGMs, and is supported by experiments. The tuning for GaN/InGaN microdisk cavities is an important step for deterministically realizing novel nanophotonic devices for studying cavity quantum electrodynamics.In recent years, there has been tremendous progress in the understanding of lightmatter interactions (cavity quantum electrodynamics, or cQED) in semiconductor systems [1][2][3][4][5][6][7][8] . Strong coupling has been observed for GaAs-based cavities coupled to embedded InGaAs quantum dots 2, 3, 4 , and studies have also extended to other semiconductor materials 5 . Such studies provide a promising route to the realization of quantum information technology 6-9 and ultra-efficient light emitting devices 10, 11 . In particular, InGaN quantum dots (QDs), well coupled to GaN-based optical cavities offer the potential of highly efficient devices operating at room temperature in the

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“…With smooth bottom and top surfaces as indicated in the atomic force microscopy (AFM) images of Fig. 3c, optically pumped lasing from these microdisks in the UV range has been demonstrated at low temperatures ($4.3 K) [30]. Similar deep undercut GaN microdisks supported by narrow Si posts have been fabricated by a nonplasma dry releasing technique [48].…”

Section: Pivoted Gan Microdisks On Simentioning

confidence: 97%

Advances in III‐nitride semiconductor microdisk lasers

Zhang

et al. 2015

Physica Status Solidi (a)

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This paper reviews the recent progress in the design and fabrication strategies of III-nitride semiconductor microdisk lasers on sapphire or Si substrates. Involving more accurate lithography methods in the fabrication boosts quality factors (Q-factors) due to the improved optical confinement of whispering-gallery modes (WGMs) at the rim of the microdisks with smooth sidewalls and perfect circularity. Quantum dots (QDs) as gain medium within the microdisks are investigated and promising for the demonstration of microlasers with super-high Q-factors and ultra-low thresholds. And these QD-cavity systems are also facilitating the research of cavity quantum electrodynamics (QED) in the strong coupling regime and cavity-enhanced single photon emission (SPE) for quantum computing. In this paper, we also report successful fabrication of transferred GaN free-standing microdisks with InGaN quantum wells (QWs) on conductive substrates, which achieves a significant step forward to realize electrically pumped high-quality microdisk lasers on target substrates. Strategies of applying flexible transparent electrodes such as graphene and metallic nanowires are potential effective solutions for realizing current-injection of nitride-based microdisks.ß 2015 WILEYÀVCH Verlag GmbH & Co. KGaA, Weinheim 1 Introduction Over past few decades, group IIInitride compound semiconductors have been extensively studied and have emerged as indispensable materials for a wide range of optoelectronic devices. With a wide and direct energy bandgap, emissions from III-nitride semiconductors can cover the wavelength range from deep ultraviolet to the near-infrared, making them ideal candidates for incoherent and coherent light sources [1][2][3][4]. Moreover, as epitaxial growth techniques of III-nitride materials become mature, high quality quantum structures such as quantum wells (QWs) and quantum dots (QDs) can be readily achieved, greatly improving the emission efficiency via quantum confinement of the carriers within a small active region so that the possibility of radiative recombination increases, serving as gain medium for highly efficient light emitters [5][6][7]. In addition, the high binding energies of excitons in these wide bandgap materials motivate the research on photon-exciton (or polariton) dynamics and its coherent state polariton lasing in microcavities [8][9][10][11]. In fact, the research of nitride-based microcavity lasers has attracted much attention in past decades for both physical insight of lasing mechanisms in both the weak and strong coupling regimes and their widespread applications [12]. Until now,

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Lasing in GaN microdisks pivoted on Si

Cited by 87 publications

References 15 publications

GaN hemispherical micro-cavities

GaN hemispherical micro-cavities

A full free spectral range tuning of p-i-n doped gallium nitride microdisk cavity

Advances in III‐nitride semiconductor microdisk lasers

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