GaN hemispherical micro-cavities

Zhang, Yiyun; Cong, Feng; Wang, T.; Choi, H. W.

doi:10.1063/1.4940375

Cited by 11 publications

(7 citation statements)

References 34 publications

(40 reference statements)

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“…The spontaneous emission coupling factor β was estimated to be ∼0.013 from the ratio of PL intensities below and above the threshold. 31 We perform spatial dependent PL measurements to verify there is no other coexisting mode that emits beyond our detection range and thereby confirm that the lasing mode we detected is indeed single. First, we image the lasing microdisk from the top view, as shown in Figure 3b,c.…”

supporting

confidence: 55%

Three-Dimensional Anisotropic Microlaser from GaN-Based Self-Bent-Up Microdisk

Feng

et al. 2018

ACS Photonics

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Microcavities with whispering gallery modes (WGM), usually formed by two-dimensional (2D) circular structures, are significant elements in integrated optics, quantum information, and topological photonics. We report three-dimensional (3D) WGM from self-bent-up microdisks consisting of strain-released AlGaN/GaN bilayers, which provide an extra degree of freedom of the WGM photons in the vertical dimension, in contrast with the 2D WGM whose field mainly distributes in the horizontal plane. Despite the ultrathin and deformed cavity layer, the 3D WGM shows a reasonably high quality factor for GaN-based microdisks (∼1300) and exhibits single mode lasing due to the anisotropic feature of the bent-up disk, a unique advantage over the conventional planar microdisks of the same material and size. Such devices provide altitude dependence of emitting direction and are promising for applications in multilevel integrated photonics circuits.

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supporting

confidence: 55%

Three-Dimensional Anisotropic Microlaser from GaN-Based Self-Bent-Up Microdisk

Feng

et al. 2018

ACS Photonics

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“…Because of this configuration, the microcavity is capable of sustain "quasi-WG" lasing modes fed by the pyramid faces and the bottom mirror. Another unique microstructure was reported by Zhang et al 224 including a very comprehensive study of the material properties, the optical cavity, the power injection, as well as the carrier dynamics. Mushroom-like structures (hemispherical microcavities) [ Fig.…”

Section: Other Unique Micro-and Nanostructuresmentioning

confidence: 89%

Review of nanophotonics approaches using nanostructures and nanofabrication for III-nitrides ultraviolet-photonic devices

et al. 2018

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Group III-nitride semiconductor materials especially AlGaN are key-emerging candidates for the advancement of ultraviolet (UV) photonic devices. Numerous nanophotonics approaches using nanostructures (e.g., nanowires, nanorods, and quantum dots/disks) and nanofabrication (e.g., substrate patterning, photonic crystals, nanogratings, and surface-plasmons) have been demonstrated to address the material growth challenges and to enhance the device efficiencies of photonic devices operating at UV wavelengths. Here, we review the progress of nanophotonics implementations using nanostructured interfaces and nanofabrication approaches for the group III-nitride semiconductors to realize efficient UV-based photonic devices. The existing challenges of nanophotonics applications are presented. This review aims to provide analysis of state-of-the-art nanophotonic approaches in advancing the UV-photonic devices based on group III-nitride semiconductors. © The Authors. Published by SPIE under a Creative Commons Attribution 3.0 Unported License. Distribution or reproduction of this work in whole or in part requires full attribution of the original publication, including its DOI.

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“…In 2016, Zhang et al proposed a hemispherical GaN micro-dome cavity. [124] The hemispherical cavity was proposed to subdue the F-P modes coexisted with WGMs inside flat-surface cavities. The size of the fabricated cavity was ≈2 µm.…”

Section: Symmetric Gan Microdiskmentioning

confidence: 99%

“…GaN microcavities denote the optical dimensional confined GaN micro structures exhibiting singular performances or producing exotic effects, such as low‐threshold lasing, enhanced nonlinear conversion, and directional luminescence. During the past few years, numerous geometries of GaN‐based micro cavities have been investigated, including 1D photonic crystal cavities, [ 101–104 ] nanowire cavities, [ 105–109 ] nanowire waveguides, [ 110–114 ] micro disks, [ 6,115–144 ] etc. These cavities support single mode or multiple modes to realize strong light–matter coupling.…”

Section: Gan‐based Micro Cavitymentioning

confidence: 99%

Progress of GaN‐Based Optoelectronic Devices Integrated with Optical Resonances

Zhao

Liu

Wang

2022

Small

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are even smaller, only a few MHz, which are far away from the requirement of fast and large data wireless transmission for VLC. [5] To enhance the data transmission rates, complex modulation schemes and/ or equalization have to be utilized, which, however, hinder the further developments and applications. In addition, Si-based optoelectronic devices, like Si PDs, a bluefiltering technology are still used currently for shorter wavelength visible light detection, which suffers from complexity and low light transmittance. Furthermore, considering the development and mature application of GaN-based devices, there is a trend to realize the multifunctional single chip integration. However, the relative low coupling efficiency in the GaNbased optoelectronic devices still cannot meet the requirements. In this case, it is important to develop novel GaN-based optoelectronic devices with superior performances as alternative for miniaturization, simplification, and integration. To solve these problems, the concept of incorporating GaN-based devices with exotic optical resonances has been proposed. [5] Surface plasmons (SPs), microcavities, such as whispering gallery modes (WGMs) and distributed Bragg reflectors (DBR) are common optical resonant structures to improve the performances of GaN-based devices. [6][7][8][9] SPs are intrinsic electromagnetic modes excited at the metal-dielectric interfaces, accompanied with the collective oscillation behaviors of free electrons on the metal-side surfaces. [10] Giant electric field enhancement generates at the interface with exponentially decay along the perpendicular direction. Inside the GaN-based devices, the excitation of SPs can greatly enhance the density of states of the electron-hole pairs and improve the competitiveness of the radiative recombination to the non-radiative recombination. [11] It has also been demonstrated tremendously in early works that using SPs enables a path to break the optical diffraction limit of the semiconductor lasers and boost the light-matter coupling intensities in subwavelength dimensions. [11][12][13][14][15][16][17] In addition, GaN-based microcavities, such as photonics crystals, DBR, and micro disks, can confine and manipulate light. [18][19][20] By matching one or more dimensions of the cavities to the wavelength of the confined light, exotic effects can be produced, such as enhanced luminescence, directional emission, low-threshold lasing, etc. When light illuminates microcavities, the confined electron-hole pairs interact with the cavity photons. Their interaction rate relative to the average Being direct wide bandgap, III-nitride (III-N) semiconductors have many applications in optoelectronics, including light-emitting diodes, lasers, detectors, photocatalysis, etc. Incorporation of III-N semiconductors with high-efficiency optical resonances including surface plasmons, distributed Bragg reflectors and micro cavities, has attracted considerable interests for upgrading their performance, which can not only reveal the new coupling mechanism...

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GaN hemispherical micro-cavities

Cited by 11 publications

References 34 publications

Three-Dimensional Anisotropic Microlaser from GaN-Based Self-Bent-Up Microdisk

Three-Dimensional Anisotropic Microlaser from GaN-Based Self-Bent-Up Microdisk

Review of nanophotonics approaches using nanostructures and nanofabrication for III-nitrides ultraviolet-photonic devices

Progress of GaN‐Based Optoelectronic Devices Integrated with Optical Resonances

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