Laser threshold reduction in a spintronic device

Rudolph, J.; Hägele, D.; Gibbs, H. M.; Khitrova, G.; Oestreich, M.

doi:10.1063/1.1583145

Cited by 180 publications

(146 citation statements)

References 17 publications

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“…Rudolph et al (2003), for example, have demonstrated the operation of a spin laser. The laser is a vertical-cavity surfaceemitting laser (VCSEL), optically pumped in the gain medium, here two InGaAs quantum wells, with 50% spin-polarized electrons.…”

Section: Discussionmentioning

confidence: 99%

Spintronics: Fundamentals and applications

2004

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Spintronics, or spin electronics, involves the study of active control and manipulation of spin degrees of freedom in solid-state systems. This article reviews the current status of this subject, including both recent advances and well-established results. The primary focus is on the basic physical principles underlying the generation of carrier spin polarization, spin dynamics, and spin-polarized transport in semiconductors and metals. Spin transport differs from charge transport in that spin is a nonconserved quantity in solids due to spin-orbit and hyperfine coupling. The authors discuss in detail spin decoherence mechanisms in metals and semiconductors. Various theories of spin injection and spin-polarized transport are applied to hybrid structures relevant to spin-based devices and fundamental studies of materials properties. Experimental work is reviewed with the emphasis on projected applications, in which external electric and magnetic fields and illumination by light will be used to control spin and charge dynamics to create new functionalities not feasible or ineffective with conventional electronics. CONTENTS

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Section: Discussionmentioning

confidence: 99%

Spintronics: Fundamentals and applications

2004

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“…[76][77][78][79] Pumping spin-polarized carriers in the optical gain medium by using spin selective contacts or circularly polarized light can reduce the injection threshold required for electroluminescence or lasing action, finally boosting the performances of the Ge emitters and their implementation into Si-photonics circuits.…”

Section: Discussionmentioning

confidence: 99%

Spin and energy relaxation in germanium studied by spin-polarized direct-gap photoluminescence

et al. 2013

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Spin orientation of photoexcited carriers and their energy relaxation is investigated in bulk Ge by studying spin-polarized recombination across the direct band gap. The control over parameters such as doping and lattice temperature is shown to yield high polarization degree, namely larger than 40%, as well as a fine-tuning of the angular momentum of the emitted light with a complete reversal between right-and left-handed circular polarization. By combining the measurement of the optical polarization state of band-edge luminescence and Monte Carlo simulations of carrier dynamics, we show that these very rich and complex phenomena are the result of the electron thermalization and cooling in the multi-valley conduction band of Ge. The circular polarization of the direct-gap radiative recombination is indeed affected by energy relaxation of hot electrons via the X valleys and the Coulomb interaction with extrinsic carriers. Finally, thermal activation of unpolarized L valley electrons accounts for the luminescence depolarization in the high temperature regime.

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“…4,5 An increase from P n = 0.1 to 0.5 enhances the threshold reduction and the spin-filtering interval. However, different cavity positions c 2 and c 3 reveal a different behavior.…”

Section: Steady-state Gain Propertiesmentioning

confidence: 99%

“…Some spin-lasers are therefore readily available since they can be based on commercial semiconductor lasers to which a source of circularly polarized light is added subsequently. 4 Such spin injection can be readily understood from dipole optical selection rules which apply for both excitation and radiative recombination. 1, 20 A simplified band diagram for a zinc-blende QW semiconductor with the corresponding interband transitions is depicted in Fig.…”

Section: Theoretical Frameworkmentioning

confidence: 99%

“…It was experimentally demonstrated that injecting spinpolarized carriers already leads to noticeable differences in the steady-state operation. [4][5][6] The onset of lasing is attained for a smaller injection, lasing threshold reduction, while the optical gain differs for different polarizations of light, leading to gain asymmetry, also referred to as gain anisotropy. 5,6,8 In the stimulated emission, even a small carrier polarization in the active region can be greatly amplified and lead to the emission of completely circularly polarized emitted light, an example of a very efficient spin filtering.…”

Section: Introductionmentioning

confidence: 99%

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Toward high-frequency operation of spin lasers

Faria

Lee

et al. 2015

Phys. Rev. B

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Injecting spin-polarized carriers into semiconductor lasers provides important opportunities to extend what is known about spintronic devices, as well as to overcome many limitations of conventional (spin-unpolarized) lasers. By developing a microscopic model of spin-dependent optical gain derived from an accurate electronic structure in a quantum well-based laser, we study how its operation properties can be modified by spin-polarized carriers, carrier density, and resonant cavity design. We reveal that by applying an uniaxial strain it is possible to attain a large birefringence. While such birefringence is viewed as detrimental in conventional lasers, it could enable fast polarization oscillations of the emitted light in spin-lasers which can be exploited for optical communication and high-performance interconnects. The resulting oscillation frequency (> 200 GHz) would significantly exceed the frequency range possible in conventional lasers.

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Laser threshold reduction in a spintronic device

Cited by 180 publications

References 17 publications

Spintronics: Fundamentals and applications

Spintronics: Fundamentals and applications

Spin and energy relaxation in germanium studied by spin-polarized direct-gap photoluminescence

Toward high-frequency operation of spin lasers

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