The chemical vapor deposition ͑CVD͒ of gold using trifluorophosphine gold͑I͒ chloride, a simple and volatile inorganic precursor, is presented. Both solid precursor and its toluene solutions were used as starting materials. With the solid precursor placed in a simple bubbler, adhesive and continuous gold thin films were grown on Ta/TaN/SiO 2 /Si substrates with a growth rate of only 8 Å min −1 . However, with a liquid delivery system using 2.5% precursor solution in toluene with a volume rate of 0.3 mL min −1 , a growth rate of 200 Å min −1 was achieved. Both H 2 and N 2 were used as carrier gas, but only in the case of H 2 were compact and highly pure 100-200 nm thick gold films grown on Ta/TaN/SiO 2 /Si at deposition temperature as low as 110°C. The dependence of the deposition process and characteristics of gold deposited films, such as morphology, microstructure, and chemical composition, on deposition temperature and the nature of the carrier gas ͑N 2 or H 2 ͒ was also investigated.There has been much interest in the formation of thin films of metals using chemical vapor deposition ͑CVD͒. 1 These thin films have found applications in microelectronics, optical devices, wear protection, and catalysts. 2 Gold films are particularly interesting because of their low resistivity ͑2.44 ⍀ cm͒ and high chemical corrosion resistance. However, gold CVD studies have not been developed extensively like copper because of the limited gold precursor resource. Some recent studies showed that gold may be deposited from either gold͑I͒ precursors 3-10 or gold͑III͒ precursors. 11-15 Most of the known used precursors are metallo-organic compounds containing C or O atoms or both. Like other metals, gold demonstrates a high affinity for C and O and hence, these elements, when they are present in the precursor, are incorporated into the thin films as impurities. Therefore, the use of inorganic volatile precursors containing neither C nor O atoms could be an approach to solve this problem. [16][17][18] The trifluorophosphine gold͑I͒ chloride ͓AuCl͑PF 3 ͔͒, which was for the first time synthesized by Fuss and Ruhe 19 and characterized recently by an X-ray structure, 20 has been tested with success for gold deposition by laser induced chemical vapor deposition ͑LCVD͒, electron-beam induced deposition ͑EBID͒ and local deposition in the tip-sample gap of a scanning tunneling microscope. 21 However, blanket CVD studies using this precursor have not been published to date to our knowledge.Under inert atmosphere, AuCl͑PF 3 ͒ decomposition may follow the same pyrolysis mechanism to form gold metal as the one determined for alkyl gold͑I͒ trialkylphosphine precursors. 6,22 However, when hydrogen is used as a coreagent, the precursor decomposition pathway might follow another reaction route as proposed followingS indicates a surface adsorbed species, while g is a gaseous molecule. In the initial steps of the gold deposition, H 2 should be dissociatively adsorbed on the surface of the Ta substrate. 23,24 The H ad atoms then probably reduce ͓AuC...