Reaction mechanism of the Me3AuPMe3–H2 plasma-enhanced ALD process

Daele, Michiel Van; Griffiths, Matthew B. E.; Minjauw, Matthias; Barry, Seán T.; Detavernier, Christophe; Dendooven, Jolien

doi:10.1039/c9cp06855d

Cited by 3 publications

(3 citation statements)

References 38 publications

(60 reference statements)

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“…Au(III) and Au(I) compounds previously used in CVD and ALD. Compounds 19 11,26,27 and 20 26,27 are dimeric carboxylate complexes, 21 28,29 is a dimeric siloxide complex, 22 30,31,32,33,34 is a trimethylgold(III) complex bearing a trimethylphosphine coordinative ligand. Compounds 23 and 24 bear a fluoroalkyl carboxylate ligand.…”

Section: Carboxylatementioning

confidence: 99%

“…Compounds 23 and 24 bear a fluoroalkyl carboxylate ligand. Compound 22 has been used for Au ALD using O2 plasma + H2O, 31 H2 plasma, 32,34 , and O3. 33 a Calculated from Clausius-Clapeyron data, method unknown.…”

Section: Carboxylatementioning

confidence: 99%

“…Compounds 3144,50 and 3251 are trialkylphosphine and frifluorophosphine complexes of gold chloride respectively. Compounds 33,51 34,53 and 3552,53 are complexes of methylgold(I) bearing alkylphosphonite(33,34) and trialkylphosphite ligands(35). Compounds 36, Error!…”

mentioning

confidence: 99%

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Thermal Ranges and Figures of Merit for Gold-Containing Precursors For ALD

Griffiths¹,

Dubrawski²,

Gordon³

et al. 2020

Preprint

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Section: Carboxylatementioning

confidence: 99%

Section: Carboxylatementioning

confidence: 99%

See 1 more Smart Citation

Thermal Ranges and Figures of Merit for Gold-Containing Precursors For ALD

Griffiths¹,

Dubrawski²,

Gordon³

et al. 2020

Preprint

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Common Precursors and Surface Mechanisms for Atomic Layer Deposition

Barry

Gordon

Vandalon

2022

Comprehensive Organometallic Chemistry IV

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Thermal ranges and figures of merit for gold-containing precursors for atomic layer deposition

Griffiths

Dubrawski

Gordon

et al. 2021

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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This is a survey of known gold-containing chemical vapor deposition (CVD) and atomic layer deposition (ALD) precursors with a focus on collecting their volatilization and decomposition data. These data were applied to a figure of merit (σ) developed to easily assess the thermal characteristics (“volatilization temperature” and the onset of decomposition]) important in the initial assessment of molecules as potential ALD precursors. Of the 46 compounds that were identified, 23 had sufficient thermal data reported in the literature to determine a σ value. The two known gold ALD precursors (15, σ = 104 and 22, σ = 44) were both shown to be in a cluster of excellent precursors. They were each the best in their families of precursors, measured by their σ and their onset of volatility. It was also found that many potentially excellent gold ALD precursors had gold in the +3 oxidation state. Some gold(I) compounds were identified as having good figures of merit (28, σ = 78, 29, σ = 32, 36, σ = 31), but 28 and 29 were found to undergo a reductive elimination reaction at growing gold surfaces, which is a common CVD deposition route for gold(I) compounds. β-diketonates and β-ketoiminates of gold were the most encouraging family of compounds, with σ values of greater than 50. This family contained the precursor with the highest figure of merit (9, σ = 212). These compounds are difficult to make in high yield, but an alternate synthetic route that was identified during this survey might serve to make this class of gold compound competitive as a precursor.

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Reaction mechanism of the Me₃AuPMe₃–H₂ plasma-enhanced ALD process

Abstract: The reaction mechanism of the recently reported Me3AuPMe3–H2 plasma gold ALD process was investigated using in situ characterization techniques in a pump-type ALD system.

Cited by 3 publications

References 38 publications

Thermal Ranges and Figures of Merit for Gold-Containing Precursors For ALD

Thermal Ranges and Figures of Merit for Gold-Containing Precursors For ALD

Common Precursors and Surface Mechanisms for Atomic Layer Deposition

Thermal ranges and figures of merit for gold-containing precursors for atomic layer deposition

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