Laser-Induced Single-Event Transients in Black Phosphorus MOSFETs

Liang, Chundong; Li, K.; Su, Yang; Gong, Huiqi; Ryder, Kaitlyn L.; Wang, P.; Sternberg, Andrew L.; Zhang, E. X.; Alles, Michael L.; Reed, Robert A.; Koester, Steven J.; Fleetwood, D.M.; Schrimpf, Ronald D.

doi:10.1109/tns.2018.2877412

Cited by 4 publications

(2 citation statements)

References 20 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…We benchmark the radiation tolerance of CNT ICs in this work with that of other radiation-hardened FETs 37 , such as reported CNT FETs 8,38,39 , 2-D materials [40][41][42] , metal oxide thin films 43 and Si FinFETs 26,44,45 , based on important metrics involving TID, DD influences and the SET threshold energy, as shown in Fig. 5c.…”

Section: Comprehensive Radiation Effects In Cnt Electronicsmentioning

confidence: 99%

Ultra‐Strong Comprehensive Radiation Effect Tolerance in Carbon Nanotube Electronics

Zhu

Lü

Wang

et al. 2022

Small

View full text Add to dashboard Cite

Carbon nanotube (CNT) field-effect transistors (FETs) have been considered ideal building blocks for radiation-hardened integrated circuits (ICs), the demand for which is exponentially growing, especially in outer space exploration and the nuclear industry. Many studies on the radiation tolerance of CNT-based electronics have focused on the total ionizing dose (TID) effect, while few works have considered the single event effects (SEEs) and displacement damage (DD) effect, which are more difficult to measure but may be more important in practical applications. We first executed measurements of the SEEs and DD effect of CNT FETs and ICs and then presented a comprehensive radiation effect analysis of CNT electronics. The CNT ICs without special irradiation reinforcement technology exhibit a comprehensive radiation tolerance, including a 1 × 10 4 MeV•cm 2 /mg level of the laser-equivalent threshold linear energy transfer (LET) for SEEs, 2.8×10 13 MeV/g for DD and 2 Mrad (Si) for TID, which are at least 4 times higher than those in conventional radiation-hardened ICs. The ultrahigh intrinsic comprehensive radiation tolerance will promote the applications of CNT ICs in high-energy solar and cosmic radiation environments.

show abstract

Section: Comprehensive Radiation Effects In Cnt Electronicsmentioning

confidence: 99%

Ultra‐Strong Comprehensive Radiation Effect Tolerance in Carbon Nanotube Electronics

Zhu

Lü

Wang

et al. 2022

Small

View full text Add to dashboard Cite

show abstract

“…Furthermore, SEEs, which may reverse the logic function of the device or damage the device, on the NACD are equally crucial for future practical applications but are rarely studied. To assess the TID effect and SEEs on devices, X-ray , and pulse laser , radiation experiments are commonly conducted respectively, which are the effective means to evaluate the radiation effects at the laboratory level.…”

Section: Introductionmentioning

confidence: 99%

Radiation Immune-Planar Two-Terminal Nanoscale Air Channel Devices toward Space Applications

Fan,

Zhao,

Chen

et al. 2023

ACS Appl. Nano Mater.

View full text Add to dashboard Cite

In space applications, electronics must function while being strongly radiated. In this work, the radiation hardness property of the planar two-terminal nanoscale air channel device (NACD), which is a device of vacuum electronics, was demonstrated. Specifically, the total ionizing dose (TID) effect and single-event effects (SEEs) on the NACD were investigated. Xray and pulse laser were utilized as the sources of TID radiation and SEE radiation, respectively. No significant degradation was observed after 1 Mrad(Si) X-ray radiation, and no single-event transient phenomenon was detected at the pulse laser energy up to 5 nJ. Additionally, the physical mechanism of radiation hardness in the NACD was illustrated by theoretical analysis and finite element simulation. Taken together, the proposed work shows that the radiation hardness property of the NACD may have a prospect in deep space and nuclear energy applications.

show abstract

Failure Mechanism Analysis of Single-Event Effect in 4H-SiC Inverters

Gu,

Yang,

et al. 2024

IEEE Trans. Electron Devices

View full text Add to dashboard Cite

Laser-Induced Single-Event Transients in Black Phosphorus MOSFETs

Cited by 4 publications

References 20 publications

Ultra‐Strong Comprehensive Radiation Effect Tolerance in Carbon Nanotube Electronics

Ultra‐Strong Comprehensive Radiation Effect Tolerance in Carbon Nanotube Electronics

Radiation Immune-Planar Two-Terminal Nanoscale Air Channel Devices toward Space Applications

Failure Mechanism Analysis of Single-Event Effect in 4H-SiC Inverters

Contact Info

Product

Resources

About