transistors into small areas, enhancing the performance and complexity of integrated circuits (ICs). [1,2] In modern ICs, the complexity becomes visible as the distance between interconnect structures get smaller. [3] Currently, the multilevel interconnect systems employed in CMOS have inter distances below 50 nm, [4] which might compromises the performance of the ICs. The impact rises from the nonzero resistance (R) and the inherent parasitic capacitance (C p ) between neighboring interconnects separated by interlayer dielectrics (ILDs), inducing cross-talk noise, affecting the switching speed and the power consumption of ICs. [5,6] Both R and C p depend on the distance between interconnects and ILD used as an insulating layer. [3] Thus, to continue electronics scaling-down, stateof-the-art strategies have been proposed, focusing on the metals with enhancement conductance (e.g., Cu, Co, and Ru) [7][8][9][10][11][12] and the replacement of traditional dielectrics for different organic materials and porous oxides with low-dielectric-constant (κ < 2.4). [3] While organic materials present low-κ owing to their limited polarizability, the oxide layers have their low-κ caused by large free volumes. [3,13] In both cases, intrinsic disorder and high porosity lead to poor thermal properties, [14][15][16] where heat management is critical. Recently, advances in boron nitride placed 2D materials as a promising class of materials to be considered for low-κ dielectrics. [17,18] However, the The miniaturization of electronic devices highlights the need for robust low-κ materials as an alternative to prevent losses in the performance of integrated circuits. For it, surface-supported metal-organic frameworks (SURMOFs), a class of porous-hybrid materials, may cover such a demand. However, the high-intrinsic porosity makes determining the dielectric properties difficult and promotes the integration of SURMOF thin films. Here, the integration of ultrathin HKUST-1 SURMOF films into a 3D functional device architecture using soft-top electrical contacts is addressed. In this novel approach, the device structure assumes an ultracompact capacitor structure allowing determine the dielectric properties of porous thin films with considerable accuracy. A low-κ value of 2.0 ± 0.5 and robust breakdown strength of 2.8 MV cm −1 are obtained for films below 80 nm. The spontaneous selfencapsulated structure provides a footprint-area reduction of up to 90% and yields good protection for the SURMOF toward different hazardous exposure. Finite-element calculations compare the HKUST-1 performance as dielectric layer with well-established insulators applied in electronics (SiO 2 and Al 2 O 3 ). The possibility of integration and miniaturization of HKUST-1, combined with their interesting insulating properties, place this hybrid material as a robust low-k dielectric for novel electronics.