Large Single Crystals of Graphene on Melted Copper Using Chemical Vapor Deposition

Abstract

A simple method is presented for synthesizing large single crystal graphene domains on melted copper using atmospheric pressure chemical vapor deposition (CVD). This is achieved by performing the reaction above the melting point of copper (1090 °C) and using a molybdenum or tungsten support to prevent balling of the copper from dewetting. By controlling the amount of hydrogen during growth, individual single crystal domains of monolayer graphene greater than 200 μm are produced within a continuous film. Stopping growth before a complete film is formed reveals individual hexagonal domains of graphene that are epitaxially aligned in their orientation. Angular resolved photoemission spectroscopy is used to show that the graphene grown on copper exhibits a linear dispersion relationship and no sign of doping. HRTEM and electron diffraction reveal a uniform high quality crystalline atomic structure of monolayer graphene.

Hydrogen-free graphene edges

“…The graphene samples were grown by chemical vapour deposition using a liquid copper catalyst as previously reported 35 . This was achieved by placing a high-purity copper sheet (Alfa Aesar, Puratonic 99.999% pure, 0.1 mm thick, B1 cm 2 ) on top of a similar sized piece of molybdenum (Alfa Aesar, 99.95% pure, 0.1 mm thick).…”

The Way towards Ultrafast Growth of Single‐Crystal Graphene on Copper

“…In addition, the inhomogeneities influence the growth rate slightly by affecting the diffusion process 53, 54, 55, 56, 57. Proper surface treatment technique, like long‐time annealing,65 polishing,56, 68, 87 melting and resolidification,72, 73, 74 and the above mentioned special Cu stacking configuration can accelerate the graphene growth by minimizing surface roughness.…”

“…The growth of large‐area high‐quality graphene films is fundamental for the upcoming graphene applications. Chemical vapour deposition (CVD) method offers good prospects to produce large‐size graphene films due to its simplicity, controllability and cost‐efficiency 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 29, 30, 31, 32, 33, 34, 35, 36, 37, 38, 39, 40, 41, 42, 43, 44, 45, 46, 47, 48, 49, 50, 51, 52, 53, 54, 55, 56, 57, 58, 59, 60, 61, 62, 63, 64, 65, 66, 67, 68, 69, 70, 71, 72, 73, 74, 75. Many researches have verified that graphene can be catalytically grown on metallic substrates, like ruthenium (Ru),13, 14 iridium (Ir),15, 16 platinum (Pt),17, 18, …”

Charge and Spin Transport in Disordered Graphene-Based Materials

“…Another method is based on controlling the orientation of graphene domains, such that their crystal lattices are aligned. [188,189,190,191] One would then expect that these domains will merge cleanly, without forming any GGBs at the stitching regions, as shown in the upper left panel of Fig. 4.8d).…”