Charge and Spin Transport in Disordered Graphene-Based Materials

Tuan, Dinh Van

doi:10.1007/978-3-319-25571-2

Cited by 28 publications

(9 citation statements)

References 241 publications

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“…Therefore, to fit the experimental data reported in Figure c successfully, the IPE theory must be modified properly. By following Elabd’s approach within the zero temperature approximation, the total number of possible excited states for holes is given by N T = ∫ 0 hν D ( E )·d E (see Figure c), where is the density of states (DOS) of graphene, E is the hole energy with reference to the Fermi level, ℏ is the reduced Planck constant, v F is the Fermi velocity and the integral is over the range from 0 to the energy of the incoming photons, which is h ν. In addition, the number of states N from which the hole emission across the barrier q Φ B 0 may occur is N = ∫ q ϕ B 0 hν D ( E )· P ( E )·d E , where P ( E ) is the emission probability.…”

Section: Results and Discussionmentioning

confidence: 99%

“…By following the Elabd's approach [39], in the zero temperature approximation, the total number of possible excited states for holes is as shown in the down inset of Fig. 8, where [52] is the graphene density of state (DOS), E is the hole energy referred to the Fermi level, the Plank constant, v F the Dirac velocity and hν the energy of the incoming photons. On the other hand, the number of states N from which hole emission across the barrier Φ B may occur is where P(E) is the emission probability.…”

Section: Figurementioning

confidence: 99%

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Free-Space Schottky Graphene/Silicon Photodetectors Operating at 2 μm

Casalino

Russo

et al. 2018

ACS Photonics

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This paper presents the design, the fabrication and the characterization of Schottky graphene/silicon photodetectors, operating at both 2 µm and room temperature. The graphene/silicon junction has been carefully characterized: device shows a non-ideal behaviour with the increasing temperature and the interfacial trap density has been measured as 1.1 x 10 14 eV -1 cm -2 . Photodetectors are characterized by an internal (external) responsivity of 10.3 mA/W (0.16 mA/W) in an excellent agreement with the theory. Our devices pave the way for developing hybrid graphene-Si free-space illuminated PDs operating at 2 µm, for free-space optical communications, optical coherence tomography and light-radars.

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Section: Results and Discussionmentioning

confidence: 99%

Section: Figurementioning

confidence: 99%

Free-Space Schottky Graphene/Silicon Photodetectors Operating at 2 μm

Casalino

Russo

et al. 2018

ACS Photonics

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“…Unlike metals, Graphene shows a density-of-state function D(E) linearly dependent on the energy according to the formula: D E ðÞ ¼ 2|E| nℏ 2 v 2 F [38], where ℏ is the reduced Plank constant and v F is the Fermi velocity. On the other hand, as discussed in Ref.…”

Section: Theoretical Backgroundmentioning

confidence: 99%

Near-Infrared Schottky Silicon Photodetectors Based on Two Dimensional Materials

Crisci¹,

Moretti²,

Gioffrè³

et al. 2021

Light-Emitting Diodes and Photodetectors - Advances and Future Directions [Working Title]

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Since its discovery in 2004, graphene has attracted the interest of the scientific community due to its excellent properties of high carrier mobility, flexibility, strong light-matter interaction and broadband absorption. Despite of its weak light optical absorption and zero band gap, graphene has demonstrated impressive results as active material for optoelectronic devices. This success pushed towards the investigation of new two-dimensional (2D) materials to be employed in a next generation of optoelectronic devices with particular reference to the photodetectors. Indeed, most of 2D materials can be transferred on many substrates, including silicon, opening the path to the development of Schottky junctions to be used for the infrared detection. Although Schottky near-infrared silicon photodetectors based on metals are not a new concept in literature the employment of two-dimensional materials instead of metals is relatively new and it is leading to silicon-based photodetectors with unprecedented performance in the infrared regime. This chapter aims, first to elucidate the physical effect and the working principles of these devices, then to describe the main structures reported in literature, finally to discuss the most significant results obtained in recent years.

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“…According to quantum tunneling effects, electron wave function can easily penetrate through atomically thin tunneling barrier but barrier height seems to be higher to be overcome by thermal energy so the conduction mechanism needs to be elucidated [25,29]. For better understanding, we have carefully investigated Region I in which we have noticed that under low voltage range 0 < V < 4 V thermionic leakage current of few nA flows pertaining to residual defects in sheets as displayed in figure 7(b).…”

Section: I-v Characteristicsmentioning

confidence: 99%

Unveiling the tunneling phenomena in graphene–graphene homo-junctions for emerging device applications

Kaur

Singh²

2019

J. Phys.: Condens. Matter

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Motivated by the idea that high-quality graphene always produces innovative aspects of physics. In this outline, a novel class of two-dimensional (2D) assembly namely thickness controlled homo-junctions with a configuration similar to graphene–insulator-graphene is introduced in this work. We demonstrate 2D–2D quantum tunneling between two graphene stacks in which van der Waals gap serves the purpose of tunneling barrier. The nonlinear I–V characteristics with improved current switching ratio (Ion/Ioff) of ~106 coupled with counterclockwise current hysteresis which are the signatures of a memristive devices has been validated in the tunneling regime. It is the first time to report on revealing thickness modulated 2D homo junctions in exfoliated graphenic material and to disclose the involved tunneling mechanism for switching applications. This work promises well for the possibilities of graphene sheets for the realization of two terminal configured devices as a substitute of three terminal graphene based field effect transistors in the area of resistive switching memories. As graphene being a versatile candidate possessing durable future in nano-electronics, therefore understanding deep insights of its charge carrier transport mechanism under range of bias voltages is prerequisite. Strikingly, an unconventional approach for improving on/off ratio of graphene based resistive switching devices has been put forward in the present report.

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Charge and Spin Transport in Disordered Graphene-Based Materials

Cited by 28 publications

References 241 publications

Free-Space Schottky Graphene/Silicon Photodetectors Operating at 2 μm

Free-Space Schottky Graphene/Silicon Photodetectors Operating at 2 μm

Near-Infrared Schottky Silicon Photodetectors Based on Two Dimensional Materials

Unveiling the tunneling phenomena in graphene–graphene homo-junctions for emerging device applications

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