Large signal frequency dispersion of AlGaN/GaN heterostructure field effect transistors

Kohn, E.; Daumiller, I.; Schmid, P.; Nguyen, Nam X.; Nguyen, C.

doi:10.1049/el:19990697

Cited by 123 publications

(49 citation statements)

References 3 publications

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“…1.5 eV below the conduction band edge, reducing the maximum accessible drain current density. This trap level may be removed by passivation [13,14] and thinner barriers become possible [15], but are not widely implemented. In the case of InAlN the surface potential of as-grown heterostructures is pinned at a level of approx.…”

Section: Materials Propertiesmentioning

confidence: 99%

Status of the Emerging InAlN/GaN Power HEMT Technology

Medjdoub¹,

Carlin²,

Gaquière³

et al. 2008

TOEEJ

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Abstract:The InAlN/GaN heterojunction appears to be a new alternative to the common AlGaN/GaN configuration with higher sheet charge density and higher thermal stability, promising very high power and temperature performance as well as robustness. This new system opens up the possibility to scale the barrier down to 5 nm while maintaining nearly its ideal materials and device properties. The status, focussing on the lattice matched materials configuration, is reviewed.

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Section: Materials Propertiesmentioning

confidence: 99%

Status of the Emerging InAlN/GaN Power HEMT Technology

Medjdoub¹,

Carlin²,

Gaquière³

et al. 2008

TOEEJ

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“…The so-called current collapse [1][2][3][4] and long-term stability are the most important problems preventing large-scale practical usage of nitride-based heterostructure field-effect transistors ͑HFETs͒ and metal-oxide-semiconductor HFETs ͑MOSHFETs͒ in ultra-high-power microwave systems. The current collapse manifests itself as a reduction of the device current when a large alternating signal is applied to the gate.…”

mentioning

confidence: 99%

Induced strain mechanism of current collapse in AlGaN/GaN heterostructure field-effect transistors

Simin

Koudymov

Tarakji

et al. 2001

Applied Physics Letters

112

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Gated transmission line model pattern measurements of the transient current–voltage characteristics of AlGaN/GaN heterostructure field-effect transistors (HFETs) and metal–oxide–semiconductor HFETs were made to develop a phenomenological model for current collapse. Our measurements show that, under pulsed gate bias, the current collapse results from increased source–gate and gate–drain resistances but not from the channel resistance under the gate. We propose a model linking this increase in series resistances (and, therefore, the current collapse) to a decrease in piezoelectric charge resulting from the gate bias-induced nonuniform strain in the AlGaN barrier layer.

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“…The phenomenon responsible for this degradation is generally referred as ''rf-current collapse'' or ''current slump,'' which recently has been a subject of several studies. [4][5][6][7][8][9] Drain currents under large input drives were measured showing significant current compression compared to the dc values. 4,5,8 Activation energies of deep traps responsible for the current collapse were studied by optical and thermoexcitation methods.…”

Section: Mechanism Of Radio-frequency Current Collapse In Gan-algan Fmentioning

confidence: 99%

“…[4][5][6][7][8][9] Drain currents under large input drives were measured showing significant current compression compared to the dc values. 4,5,8 Activation energies of deep traps responsible for the current collapse were studied by optical and thermoexcitation methods. 6,7 The surface passivation approach was suggested to increase the microwave output power.…”

Section: Mechanism Of Radio-frequency Current Collapse In Gan-algan Fmentioning

confidence: 99%

Mechanism of radio-frequency current collapse in GaN–AlGaN field-effect transistors

Tarakji

Simin

Il’inskaya

et al. 2001

Applied Physics Letters

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The mechanism of radio-frequency current collapse in GaN–AlGaN heterojunction field-effect transistors (HFETs) was investigated using a comparative study of HFET and metal–oxide–semiconductor HFET current–voltage (I–V) and transfer characteristics under dc and short-pulsed voltage biasing. Significant current collapse occurs when the gate voltage is pulsed, whereas under drain pulsing the I–V curves are close to those in steady-state conditions. Contrary to previous reports, we conclude that the transverse electric field across the wide-band-gap barrier layer separating the gate and the channel rather than the gate or surface leakage currents or high-field effects in the gate–drain spacing is responsible for the current collapse. We find that the microwave power degradation in GaN–AlGaN HFETs can be explained by the difference between dc and pulsed I–V characteristics.

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Large signal frequency dispersion of AlGaN/GaN heterostructure field effect transistors

Cited by 123 publications

References 3 publications

Status of the Emerging InAlN/GaN Power HEMT Technology

Status of the Emerging InAlN/GaN Power HEMT Technology

Induced strain mechanism of current collapse in AlGaN/GaN heterostructure field-effect transistors

Mechanism of radio-frequency current collapse in GaN–AlGaN field-effect transistors

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