Induced strain mechanism of current collapse in AlGaN/GaN heterostructure field-effect transistors

Simin, Grigory; Koudymov, A.; Tarakji, A.; Hu, X.; Yang, Jinwei; Khan, M. Asif; Shur, M. S.; Gaška, R.

doi:10.1063/1.1412282

Cited by 112 publications

(48 citation statements)

References 10 publications

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“…In this interpretation, a reduction in P PE AlGaN ͓Eq. ͑6͔͒ can attributed to the relaxation of in-plane stress in AlGaN layer, in agreement with the observations made by Simin et al 9 It should be noted that the dynamics of current collapse will depend upon the type of traps and their associated trapping and detrapping time constants.…”

Section: Bias Induced Strain In Algan / Gan Heterojunction Field Effesupporting

confidence: 90%

Bias induced strain in AlGaN∕GaN heterojunction field effect transistors and its implications

Anwar

Webster²,

Smith

2006

Applied Physics Letters

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Section: Bias Induced Strain In Algan / Gan Heterojunction Field Effesupporting

confidence: 90%

Bias induced strain in AlGaN∕GaN heterojunction field effect transistors and its implications

Anwar

Webster²,

Smith

2006

Applied Physics Letters

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“…3b), which indicates that the series resistances outside the gate region may be affected by the induced stress. 26 were subsequently used to monitor changes in the resistances of the device upon passivation.…”

Section: Resultsmentioning

confidence: 99%

Influence of dual-frequency plasma-enhanced chemical-vapor deposition Si3N4 passivation on the electrical characteristics of AlGaN/GaN heterostructure field-effect transistors

Tan

Houston

Hill

et al. 2004

Journal of Elec Materi

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The influence of dielectric stress on the direct current (DC) electrical characteristics of AlGaN/GaN heterostructure field-effect transistors (HFETs) has been investigated. Dual-frequency plasma deposition was used to vary the amount of stress induced by a passivating dielectric on the surface of the devices. Initial data suggested a strong influence from the induced dielectric stress, but the low-frequency, radio-frequency (RF) excitation of the plasma deposition process was found to induce a severe nonreversible damage to the exposed AlGaN surface through N ion bombardment. The consequence is a drastic reduction of the sheet carrier concentration and mobility of the twodimensional electron gas (2DEG). Subsequently, an alternative damage-free technique using a helium precursor was used to obtain compressive films. Based on the results, uniform dielectric stress has a minimal impact on the polarization charges within the AlGaN barrier.

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“…One possible reason for that could be the additional strain in the AlGaN/GaN structure induced by positive gate voltage. As we proposed recently, 8 this strain should result in additional electron accumulation in the source-gate and gate-drain openings. More detailed study of this effect is ongoing.…”

Section: ͑2͒mentioning

confidence: 70%

Maximum current in nitride-based heterostructure field-effect transistors

Koudymov

Husna

Simin

et al. 2002

Applied Physics Letters

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We present experimental and modeling results on the gate-length dependence of the maximum current that can be achieved in GaN-based heterostructure field-effect transistors (HFETs) and metal–oxide–semiconductor HFETs (MOSHFETs). Our results show that the factor limiting the maximum current in the HFETs is the forward gate leakage current. In the MOSHFETs, the gate leakage current is suppressed and the overflow of the two dimensional electron gas into the AlGaN barrier region becomes the most important factor limiting the maximum current. Therefore, the maximum current is substantially higher in MOSHFETs than in HFETs. The measured maximum current increases with a decrease in the gate length, in qualitative agreement with the model that accounts for the velocity saturation in the channel and for the effect of the source series resistance. The maximum current as high as 2.6 A/mm can be achieved in MOSHFETs with a submicron gate.

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Induced strain mechanism of current collapse in AlGaN/GaN heterostructure field-effect transistors

Cited by 112 publications

References 10 publications

Bias induced strain in AlGaN∕GaN heterojunction field effect transistors and its implications

Bias induced strain in AlGaN∕GaN heterojunction field effect transistors and its implications

Influence of dual-frequency plasma-enhanced chemical-vapor deposition Si3N4 passivation on the electrical characteristics of AlGaN/GaN heterostructure field-effect transistors

Maximum current in nitride-based heterostructure field-effect transistors

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