2008
DOI: 10.1016/j.jallcom.2007.08.014
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Large-scale synthesis and photoluminescence properties of hexagonal-shaped SiC nanowires

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Cited by 31 publications
(19 citation statements)
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“…SiCNWs [38,[238][239]. Some synthesized SiC nanostructures showed emission in the blue-to-UV range with their properties depending sensitively on the fabrication method and even on Compared with the previous reports, the synthesized nanowires exhibit two larger blue shifts in the photoluminescence (PL) spectrum.…”
Section: A N U S C R I P Tmentioning
confidence: 88%
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“…SiCNWs [38,[238][239]. Some synthesized SiC nanostructures showed emission in the blue-to-UV range with their properties depending sensitively on the fabrication method and even on Compared with the previous reports, the synthesized nanowires exhibit two larger blue shifts in the photoluminescence (PL) spectrum.…”
Section: A N U S C R I P Tmentioning
confidence: 88%
“…A C C E P T E D There were several reports on large scale synthesis of 1D SiC materials by reacting silicon/silica with carbon source having high surface area such as activated carbon [37][38]. Wang et al [150] synthesized SiCNWs by heating a mixture of SiO powder and arc-discharge plasma pretreated carbon black with porous and loose structures in a high frequency induction furnace.…”
Section: Bulk Production Of 1d Silicon Carbide Nanomaterials: Currentmentioning
confidence: 99%
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“…have a larger energy band gap than their bulk ones, [21][22][23][24][25][26][27][28][29][30][31][32] and most of these nanostructures have a strong light emission in ultraviolet regions. Therefore, it is very interesting and challenging to explore the PL properties of SiC:Tb nanostructures.…”
Section: Introductionmentioning
confidence: 99%
“…Several mechanisms for the growth of one dimensional nanostructure have been proposed such as vapor-liquid-solid (VLS) 44 , vapor-solid (VS) 45 and solid-liquid-solid (SLS) 46 mechanisms. In this study, mechanism of vapor-solid (VS) was suggested to explain the synthesis of SiCNTs from the blend of SiO 2 and MWCNTs at 1400 °C with heating rate of 30 °C/min and maintained for 40 minute.…”
Section: Growth Mechanism Of Silicon Carbide Nanotubes (Sicnts)mentioning
confidence: 99%