2017
DOI: 10.1590/1980-5373-mr-2017-0277
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Effective Synthesis of Silicon Carbide Nanotubes by Microwave Heating of Blended Silicon Dioxide and Multi-Walled Carbon Nanotube

Abstract: Silicon carbide nanotube (SiCNTs) has been proven as a suitable material for wide applications in high power, elevated temperature and harsh environment. For the first time, we reported in this article an effective synthesis of SiCNTs by microwave heating of SiO 2 and MWCNTs in molar ratio of 1:1, 1:3, 1:5 and 1:7. Blend of SiO 2 and MWCNTs in the molar ratio of 1:3 was proven to be the most suitable for the high yield synthesis of β-SiCNTs as confirmed by X-ray diffraction pattern. Only SiCNTs were observed f… Show more

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Cited by 39 publications
(5 citation statements)
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“…Many modifications have since been made for industrialization of this route through different studies. Recently, microwave heating is utilized to fabricate SiC [102][103][104]. Different catalyst activities for the formation of SiC have also been investigated in several studies [105].…”
Section: Silicon Carbidementioning
confidence: 99%
“…Many modifications have since been made for industrialization of this route through different studies. Recently, microwave heating is utilized to fabricate SiC [102][103][104]. Different catalyst activities for the formation of SiC have also been investigated in several studies [105].…”
Section: Silicon Carbidementioning
confidence: 99%
“…Figure 4c shows the XRD test setup. XRD was used in accordance with ASTM E915-96 [34][35][36][37]. In the XRD analysis, when the X-ray collides with a crystal, a portion of it is diffracted.…”
Section: Fabricationmentioning
confidence: 99%
“…After that, many modifications have been made by several researchers for industrialization of this process. Recently, microwave heating and different catalyst activities have been investigated for the preparation of SiC from RH through different studies [202][203][204][205]. Certain metallic catalysts (Co, Fe, Pd, Ni, and Cr) are significantly enhanced the reaction kinetic between SiO 2 and C in the temperature at 1200-1600°C.…”
Section: Silicon Carbidementioning
confidence: 99%