Large-scale complementary macroelectronics using hybrid integration of carbon nanotubes and IGZO thin-film transistors

Chen, Haitian; Cao, Yu; Zhang, Jialü; Zhou, Chongwu

doi:10.1038/ncomms5097

Cited by 242 publications

(128 citation statements)

References 65 publications

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“…This is why the majority of flexible (and also rigid) metal oxide semiconductor-based circuits are unipolar operating with only n-type TFTs, 94,119,127,133,143,148,159,164,166,212,213,218, whereas flexible complementary circuits based on both n-and p-type devices are less frequent. 79,103,172,272,285,[330][331][332] Such disparity between n-and p-type devices renews an old challenge encountered in Si technology back in the 1970s and 1980s when the circuits were built using only one semiconductor polarity (n-type or p-type MOSFETs). 333 Fig .…”

Section: Circuit Configurationmentioning

confidence: 99%

“…Thus, different combinations of p-type organic TFTs with n-type metal oxide semiconductor devices have so far been demonstrated on flexible substrates. 103,172,[330][331][332][340][341][342] In the following, the materials and fabrication techniques, the electrical and the mechanical properties of flexible complementary circuits based on both fully metal oxide semiconducting materials, as well as hybrid organic-metal oxide semiconductors are reviewed.…”

Section: Flexible Complementary Circuitsmentioning

confidence: 99%

“…and dip-coating, 332,343,344 in addition to the widely used thermal evaporation with shadow masking. 172,330,331,340 Different groups have so far demonstrated the potential of integrating p-type pentacene, 172,330,331,340 poly-(9,9-dioctylfluorene-co-bithiophene) (F8T2), 341,342 and semiconducting single walled carbon nanotubes (SWCNTs) 342 The F8T2/IGZO NOT gate shows a gain G ¼ 100 V/V at a maximum supply of 30 V. 342 The same group realized also vertically stacked F8T2/IGZO NAND gates on PET.…”

Section: Materials and Fabrication Techniquesmentioning

confidence: 99%

See 2 more Smart Citations

Metal oxide semiconductor thin-film transistors for flexible electronics

Petti

Münzenrieder

Vogt

et al. 2016

Applied Physics Reviews

547

430

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Section: Circuit Configurationmentioning

confidence: 99%

Section: Flexible Complementary Circuitsmentioning

confidence: 99%

Section: Materials and Fabrication Techniquesmentioning

confidence: 99%

See 1 more Smart Citation

Metal oxide semiconductor thin-film transistors for flexible electronics

Petti

Münzenrieder

Vogt

et al. 2016

Applied Physics Reviews

547

430

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“…Using randomly oriented or aligned CNT array films, various types of CNT thin-film FETs have been fabricated [9][10][11][12][13] . However, hindered by the limited performance of nanotube FETs, the operation speed of CNT integrated circuits (ICs) [20][21][22][23][24][25][26][27][28][29][30][31] typically falls short of their expected terahertz potential, and that achieved by Si CMOS circuits (gigahertz), by several orders of magnitude. Notably, CNT-based ring oscillators (ROs) with an oscillation frequency (f o ) of 282 MHz have recently been reported 32 .…”

mentioning

confidence: 99%

Gigahertz integrated circuits based on carbon nanotube films

et al. 2017

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Carbon nanotube (CNT)-based electronics are a potential candidate to replace silicon complementary metal-oxide-semiconductor (CMOS) technology, which will soon meet its performance limit at the 7 or 5 nm technology node 1,2 . Prototype device studies using individual CNTs have shown that nanotube electronics have the potential to outperform Si CMOS technology in both performance and power consumption [3][4][5][6] , and are even close to the theoretical limits for all field-effect-transistor(FET)-based binary switches 7,8 . Recently, FETs were fabricated using aligned CNT arrays, and shown to have a higher channel conductance (at a lower bias) than that of Si CMOS FETs 9 . However, the key performance metrics reported for such CNT FETs, including on-state current density (I on ) and transconductance (g m ), are still substantially lower than those of conventional Si CMOS FETs at the same characteristic length [9][10][11][12][13] . The ideal material system for high-performance CNT electronics has been identified as a parallel array film of intrinsic pure semiconductor single-walled nanotubes of a single chirality with a diameter of approximately 1.3 nm and no defects, and a tube-tube spacing of 5-8 nm (ref. 14 ). Although such an ideal material system is yet to be realized, many breakthroughs in the purification and controlled synthesis of CNTs have been made in recent years [15][16][17][18][19] , suggesting the possibility of achieving the required nanotube purity and array density before 2020 14 . Using randomly oriented or aligned CNT array films, various types of CNT thin-film FETs have been fabricated [9][10][11][12][13] . However, hindered by the limited performance of nanotube FETs, the operation speed of CNT integrated circuits (ICs) 20-31 typically falls short of their expected terahertz potential, and that achieved by Si CMOS circuits (gigahertz), by several orders of magnitude. Notably, CNT-based ring oscillators (ROs) with an oscillation frequency (f o ) of 282 MHz have recently been reported 32 . However, CNT-thin-film-based ICs typically have a working frequency of less than 1 MHz, which might be useful for flexible electronics, but is not suitable for mainstream high-performance CMOS technology 33 . In this study, we used a randomly oriented CNT film to build CNT FETs and ICs, fabricating, in particular, five-stage ROs with f o of up to 5.54 GHz. The random CNT film is essentially the same as a network film, but here we used the term 'random film' to emphasize that our FETs are contact dominated and have a different transport mechanism to that of junction-dominated network-type FETs 34,35 . In principle, aligned CNT arrays would provide better device performance, but it remains a challenge to obtain wafer-scale aligned CNT arrays with high uniformity, high density and high semiconductor purity for constructing high-performance ICs. Although it is not the ideal scheme, the FET-and IC-based random CNT film can nevertheless provide a feasible demonstration to assess the floor-level performance (f...

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“…However, this approach lacks the advantages of CMOS which enables low power consumption, high gain, superior noise immunity and simplified circuit design [5]. Recently, efforts have been undertaken to realize complementary technology with oxide semiconductors involving p-type carbon nanotubes [2,6,7] or p-type SnO [5]. GST is an alloy of Ge, Sb and Te belonging to the family of chalcogenide glasses.…”

Section: Introductionmentioning

confidence: 99%

Flexible CMOS electronics based on p-type Ge<inf>2</inf>Sb<inf>2</inf>Te<inf>5</inf> and n-type InGaZnO<inf>4</inf> semiconductors

Daus¹,

Han²,

Knobelspies³

et al. 2017

2017 IEEE International Electron Devices Meeting (IEDM)

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Abstract-Ultra-thin p-type chalcogenide glass Ge2Sb2Te5 (GST) semiconductor layers are employed to form flexible thin-film transistors (TFTs). For the first time, TFTs based on GST show saturating output characteristics and an ON/OFF ratio up to 388, exceeding present reports by a factor of ~20. The channel current modulation is greatly enhanced by using ultra-thin 5 nm thick amorphous GST layers and 20 nm thick high-k Al2O3 gate dielectrics. Flexible CMOS circuits are realized in combination with the n-type oxide semiconductor InGaZnO4 (IGZO). The CMOS inverters show voltage gain of up to 69. Furthermore, flexible NAND gates are presented. The bending stability is shown for a tensile radius of 6 mm.

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Large-scale complementary macroelectronics using hybrid integration of carbon nanotubes and IGZO thin-film transistors

Cited by 242 publications

References 65 publications

Metal oxide semiconductor thin-film transistors for flexible electronics

Metal oxide semiconductor thin-film transistors for flexible electronics

Gigahertz integrated circuits based on carbon nanotube films

Flexible CMOS electronics based on p-type Ge<inf>2</inf>Sb<inf>2</inf>Te<inf>5</inf> and n-type InGaZnO<inf>4</inf> semiconductors

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