Large room temperature Rabi-splitting in a ZnSe/(Zn,Cd)Se semiconductor microcavity structure

Pawlis, A.; Khartchenko, A.; Husberg, O.; As, D. J.; Lischka, K.; Schikora, D.

doi:10.1016/s0038-1098(02)00251-x

Cited by 21 publications

(14 citation statements)

References 14 publications

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“…This comparatively large value of the Rabi energy achieved by employing three QWs only is expected for this type of microcavities due to the high oscillator strength of excitons in selenides and is in good agreement with reports in literature. 16 These results confirm the advantageous influence of the small spectral width of the binary active layer in comparison to ZnSe-based MCs with ZnCdSSe QWs, where 16 QWs are used to achieve the strong coupling regime. 18 From the measured graph, the reflectivity spectrum at k ¼ 0 can be extracted.…”

supporting

confidence: 67%

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Strong coupling in monolithic microcavities with ZnSe quantum wells

Sebald¹,

Seyfried²,

Klembt³

et al. 2012

Appl. Phys. Lett.

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confidence: 67%

“…Lasing of GaN polaritons at room temperature has been reported. 13,14 Furthermore, strong coupling was reported for ZnSe-based microcavities with ternary (ZnCdSe) [15][16][17] and quaternary (ZnCdSSe) 18 quantum wells (QWs).…”

mentioning

confidence: 99%

Strong coupling in monolithic microcavities with ZnSe quantum wells

Sebald¹,

Seyfried²,

Klembt³

et al. 2012

Appl. Phys. Lett.

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“…Consequently, the critical temperature for polariton condensations is generally eight orders of magnitude higher than that needed for atom BECs. Room temperature dynamic condensation of polaritons in wide band gap semiconductors is not out of reach with present day techniques (15,17).…”

Section: Dynamic Condensation Of Polaritonsmentioning

confidence: 99%

Polariton lasing vs. photon lasing in a semiconductor microcavity

Deng

Weihs

Snoke

et al. 2003

Proc. Natl. Acad. Sci. U.S.A.

401

368

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Nearly one decade after the first observation of Bose-Einstein condensation in atom vapors and realization of matter-wave (atom) lasers, similar concepts have been demonstrated recently for polaritons: half-matter, half-light quasiparticles in semiconductor microcavities. The half-light nature of polaritons makes polariton lasers promising as a new source of coherent and nonclassical light with extremely low threshold energy. The half-matter nature makes polariton lasers a unique test bed for many-body theories and cavity quantum electrodynamics. In this article, we present a series of experimental studies of a polariton laser, exploring its properties as a relatively dense degenerate Bose gas and comparing it to a photon laser achieved in the same structure. The polaritons have an effective mass that is twice the cavity photon effective mass, yet seven orders of magnitude less than the hydrogen atom mass; hence, they can potentially condense at temperatures seven orders of magnitude higher than those required for atom Bose-Einstein condensations. Accompanying the phase transition, a polariton laser emits coherent light but at a threshold carrier density two orders of magnitude lower than that needed for a normal photon laser in a same structure. It also is shown that, beyond threshold, the polariton population splits to a thermal equilibrium Bose-Einstein distribution at in-plane wave number k ʈ > 0 and a nonequilibrium condensate at kʈ ϳ 0, with a chemical potential approaching to zero. The spatial distributions and polarization characteristics of polaritons also are discussed as unique signatures of a polariton laser. E xperimentally realized macroscopic degenerate boson systems, such as lasers, superfluid He 3 and He 4 , the Bardeen-CooperSchreiffer state in superconductors, and Bose-Einstein condensation (BEC) of atomic vapors, have deepened our fundamental understanding of macroscopic quantum orders and led to novel research tools as well as applications. A missing member from the family has been a macroscopically ordered state of weakly interacting bosons in condensed matter systems. Exciton and polariton BECs are the most promising candidates in this category. Since they were first proposed in the 1960s (1-3), tremendous efforts have been engaged in the search (4-13). Exciton and polariton BECs are attractive yet elusive because of the complications inherent to solid-state systems with strong Coulomb interactions. It is a formidable task to describe the excitations in solids in full detail. The common approach is to treat the stable ground state of an isolated system as a quasivacuum and to introduce quasiparticles as units of elementary excitation, which only weakly interact with each other. An exciton is a typical example of such a quasiparticle. As a result of optical excitation from the crystal ground state, an exciton consists of a bound pair of an electron and hole whose Coulomb interaction serves as the binding energy. Excitons have integral total spin, thus they behave like bosons, weakly interac...

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“…1 Introduction Devices based on microcavity polaritons in wide band gap semiconductors such as GaN or ZnSe have recently attracted attention [1][2][3][4][5][6]. These materials are very promising candidates for room temperature lasers based on strong exciton-photon coupling [7,8].…”

mentioning

confidence: 99%

AlGaN‐based Bragg mirrors and hybrid microcavities for the ultra‐violet spectral region

Alyamani

Sanvitto

Wang

et al. 2005

phys. stat. sol. (c)

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Epitaxially grown AlGaN-AlGaN Bragg mirrors and AlInGaN-AlGaN quantum well cavity regions designed for operation in the ultra-violet spectral region are reported. Full cavities are completed by deposition of dielectric top mirrors. We obtain high AlGaN-AlGaN mirror reflectivities of up to 94%, and cavity Q-values close to 100. We also demonstrate the successful growth of 2.5nm linewidth quantum wells on 25 layer-repeat Bragg mirrors. These results are promising first steps towards the realisation of AlGaNbased microcavity polariton devices. -6]. These materials are very promising candidates for room temperature lasers based on strong exciton-photon coupling [7,8]. In order to achieve strong coupling in GaN based systems, there is a requirement for cavities with high Q-factors (in excess of ~200, corresponding to reflectivities greater than ~95%) and relatively narrow QWs of line widths ~20-40 meV. The conventional approach to achieve high finesse cavities in the GaAs-system is to grow fully epitaxial structures with distributed Bragg reflectors (DBRs) grown before and after the resonant cavity. However in GaN-AlGaN based microcavities the growth of such structures is extremely challenging due to the build up of mismatch strain and subsequent cracking of the structures [9][10][11][12][13][14][15]. In spite of this difficulty we have recently reported the first high reflectivity AlGaN-AlGaN Bragg mirrors in the ultraviolet spectral region [16], following earlier reports of GaN-AlGaN structures in the blue [14].Most attempts at GaN or AlGaN-based microcavities rely on the use of either hybrid structures containing an epitaxially grown lower Bragg mirror, cavity region and upper dielectric Bragg mirror [17][18][19], the approach we follow here, or fully dielectric structures composed of upper and lower dielectric DBRs, surrounding a GaN-based active region. Polariton anticrossing at temperatures as high as 300 K has recently been reported in double dielectric structures [20], although the challenge in the fabrication of such structures is considerable, relying on the development of advanced etching technologies.In this paper we present the fabrication of AlGaN-based hybrid microcavity structures with the bottom DBR and cavity grown by low pressure MOCVD, and the cavity completed by upper mirror dielectric stack deposition, all operating in the ultraviolet spectral region. This work builds on our recent report of high reflectivity AlGaN-AlGaN Bragg mirrors in the ultraviolet spectral region [16].

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Large room temperature Rabi-splitting in a ZnSe/(Zn,Cd)Se semiconductor microcavity structure

Cited by 21 publications

References 14 publications

Strong coupling in monolithic microcavities with ZnSe quantum wells

Strong coupling in monolithic microcavities with ZnSe quantum wells

Polariton lasing vs. photon lasing in a semiconductor microcavity

AlGaN‐based Bragg mirrors and hybrid microcavities for the ultra‐violet spectral region

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