Large phase shifts in As_2S_3 waveguides for all-optical processing devices

Ruan, Yinlan; Luther‐Davies, Barry; Li, Weitang; Rode, Andrei; Kolev, Vesselin Z; Madden, Steve

doi:10.1364/ol.30.002605

Cited by 21 publications

(14 citation statements)

References 14 publications

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“…For instance, optical fibers with large intensity-dependent refractive index n 2 and two-photon absorption coefficient β are required for all-optical switches and intensity stabilizers [2]. In addition, laser micro-fabrications appear to be indispensable for producing waveguides and three-dimensional devices [3,4].…”

Section: Introductionmentioning

confidence: 99%

Optical nonlinearity in glasses: the origin and photo-excitation effects

Tanaka

Saitoh

2007

J Mater Sci: Mater Electron

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Linear and nonlinear optical properties in oxide and chalcogenide glasses have been studied comparatively. Applying a semiconductor concept to these glasses, we show that maximal nonlinear refractive-index at optical communication wavelengths is ~10 -4 cm 2 /GW, which can be obtained in materials with bandgap energy of ~1.6 eV. It is also shown for SiO 2 and As 2 S 3 that linear and nonlinear optical excitations induce different photostructural changes, which are attributable to different photo-electronic transition probabilities.

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Section: Introductionmentioning

confidence: 99%

Optical nonlinearity in glasses: the origin and photo-excitation effects

Tanaka

Saitoh

2007

J Mater Sci: Mater Electron

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“…We have found wavelength-dependent measurements of the nonlinear index, n 2 , for arsenic sulfide from different data sources [150,[165][166][167][168][169][170][171][172][173][174]. As shown in Figure 3, although slightly scattered, these n 2 values in arsenic sulfide are as high as those in silicon and would not be strongly wavelength-dependent beyond 1.55 µm, because it is longer than the half-bandgap wavelength.…”

Section: Methodsmentioning

confidence: 92%

Nonlinear Group IV photonics based on silicon and germanium: from near-infrared to mid-infrared

et al. 2014

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Group IV photonics hold great potential for nonlinear applications in the near-and mid-infrared (IR) wavelength ranges, exhibiting strong nonlinearities in bulk materials, high index contrast, CMOS compatibility, and cost-effectiveness. In this paper, we review our recent numerical work on various types of silicon and germanium waveguides for octave-spanning ultrafast nonlinear applications. We discuss the material properties of silicon, silicon nitride, silicon nano-crystals, silica, germanium, and chalcogenide glasses including arsenic sulfide and arsenic selenide to use them for waveguide core, cladding and slot layer. The waveguides are analyzed and improved for four spectrum ranges from visible, near-IR to mid-IR, with material dispersion given by Sellmeier equations and wavelength-dependent nonlinear Kerr index taken into account. Broadband dispersion engineering is emphasized as a critical approach to achieving on-chip octavespanning nonlinear functions. These include octave-wide supercontinuum generation, ultrashort pulse compression to sub-cycle level, and mode-locked Kerr frequency comb generation based on few-cycle cavity solitons, which are potentially useful for next-generation optical communications, signal processing, imaging and sensing applications.

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“…This value is chosen because it can generate the largest nonlinear phase shift (Ruan, Luther-Davies, Li, Rode, Kolev, & Madden, 2005). To reach the switching state from port a 1 to port b 1 , firstly we find the intensity I 1 , which is introduced into control waveguide 1 (also see Figure 1), by varying the intensity slowly.…”

Section: Design and Optimizationmentioning

confidence: 99%

All-Optical Switches Based on 3×3 Multimode Interference Couplers Using Nonlinear Directional Couplers

Truong¹,

Le²,

Tran³

2013

APR

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Multimode interference in optical waveguide is attractive for all optical switching. In this paper, a novel 3×3 all-optical switch based on 3×3 multimode interference (MMI) structures is proposed. Nonlinear directional couplers in two arms of the structure are used as phase shifters. In this study, we use chalcogenide glass on silica for designing the device structure. The switching states of the device can be controlled by adjusting the optical control signals at the phase shifters. The transfer matrix method and beam propagation method (BPM) are used for designing and optimizing the device structure.

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Large phase shifts in As_2S_3 waveguides for all-optical processing devices

Cited by 21 publications

References 14 publications

Optical nonlinearity in glasses: the origin and photo-excitation effects

Optical nonlinearity in glasses: the origin and photo-excitation effects

Nonlinear Group IV photonics based on silicon and germanium: from near-infrared to mid-infrared

All-Optical Switches Based on 3×3 Multimode Interference Couplers Using Nonlinear Directional Couplers

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