Large modulation of the Shubnikov–de Haas oscillations by the Rashba interaction at the LaAlO<sub>3</sub>/SrTiO<sub>3</sub> interface

Fête, Alexandre; Gariglio, Stefano; Berthod, Christophe; Li, Danfeng; Stornaiuolo, Daniela; Gabay, M.; Triscone, Jean‐Marc

doi:10.1088/1367-2630/16/11/112002

Cited by 55 publications

(79 citation statements)

References 40 publications

(59 reference statements)

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Further evidence of the population of d xz /d yz orbitals in LAO/STO interfaces grown at 650 C were provided recently by detailed analyses of the Shubnikov-de Haas oscillations. 38 In order to shed further light on the effect of the carrier density on the sample mobility, we performed a series of field effect experiments in samples grown at 800 C. In agreement with Bell and coworkers, 15 we find that the dominant effect of the electric field in the back gate geometry is the modulation of the mobility. In Fig.…”

supporting

confidence: 80%

Growth-induced electron mobility enhancement at the LaAlO3/SrTiO3 interface

Fête

Cancellieri

et al. 2015

Applied Physics Letters

View full text Add to dashboard Cite

We have studied the electronic properties of the 2D electron liquid present at the LaAlO3/SrTiO3 interface in series of samples prepared at different growth temperatures. We observe that interfaces fabricated at 650 °C exhibit the highest low temperature mobility (≈10 000 cm2 V−1 s−1) and the lowest sheet carrier density (≈5×1012 cm−2). These samples show metallic behavior and Shubnikov-de Haas oscillations in their magnetoresistance. Samples grown at higher temperatures (800–900 °C) display carrier densities in the range of ≈2−5×1013 cm−2 and mobilities of ≈1000 cm2 V−1 s−1 at 4 K. Reducing their carrier density by field effect to 8×1012 cm−2 lowers their mobilities to ≈50 cm2 V−1 s−1 bringing the conductance to the weak-localization regime.

show abstract

supporting

confidence: 80%

Growth-induced electron mobility enhancement at the LaAlO3/SrTiO3 interface

Fête

Cancellieri

et al. 2015

Applied Physics Letters

View full text Add to dashboard Cite

show abstract

“…[69][70][71][72][73] For instance, reducing the growth temperature 74 or using special cappings of the LAO layer 75 allows mobilities of the order of 10 000 cm 2 /Vs to be reached at low temperature, these are associated with low carrier densities. The electronic structure and the control of superconductivity in such clean interfaces have yet to be determined.…”

Section: Summary and Perspectivesmentioning

confidence: 99%

Research Update: Conductivity and beyond at the LaAlO3/SrTiO3 interface

2016

View full text Add to dashboard Cite

In this review, we focus on the celebrated interface between two band insulators, LaAlO3 and SrTiO3, that was found to be conducting, superconducting, and to display a strong spin-orbit coupling. We discuss the formation of the 2-dimensional electron liquid at this interface, the particular electronic structure linked to the carrier confinement, the transport properties, and the signatures of magnetism. We then highlight distinctive characteristics of the superconducting regime, such as the electric field effect control of the carrier density, the unique tunability observed in this system, and the role of the electronic subband structure. Finally we compare the behavior of Tc versus 2D doping with the dome-like behavior of the 3D bulk superconductivity observed in doped SrTiO3. This comparison reveals surprising differences when the Tc behavior is analyzed in terms of the 3D carrier density for the interface and the bulk.

show abstract

“…We describe the various terms in this three-band Hamiltonian, with parameter values from the literature [12,[20][21][22][23][24][25][26][27][28][29]] that we will use in our calculations. (Further details are given in the Supplemental Material [28].…”

mentioning

confidence: 99%

Giant Negative Magnetoresistance Driven by Spin-Orbit Coupling at theLaAlO3/SrTiO3Interface

et al. 2015

View full text Add to dashboard Cite

The LaAlO 3 =SrTiO 3 interface hosts a two-dimensional electron system that is unusually sensitive to the application of an in-plane magnetic field. Low-temperature experiments have revealed a giant negative magnetoresistance (dropping by 70%), attributed to a magnetic-field induced transition between interacting phases of conduction electrons with Kondo-screened magnetic impurities. Here we report on experiments over a broad temperature range, showing the persistence of the magnetoresistance up to the 20 K rangeindicative of a single-particle mechanism. Motivated by a striking correspondence between the temperature and carrier density dependence of our magnetoresistance measurements we propose an alternative explanation. Working in the framework of semiclassical Boltzmann transport theory we demonstrate that the combination of spin-orbit coupling and scattering from finite-range impurities can explain the observed magnitude of the negative magnetoresistance, as well as the temperature and electron density dependence. The mobile electrons at the LaAlO 3 =SrTiO 3 (LAO=STO) interface [1] display an exotic combination of superconductivity [2,3] and magnetic order [4][5][6][7]. The onset of superconductivity at sub-Kelvin temperatures appears in an interval of electron densities where the effect of Rashba spin-orbit coupling on the band structure at the Fermi level is strongest [8,9], but whether this correlation implies causation remains unclear.Transport experiments above the superconducting transition temperature have revealed a very large ("giant") drop in the sheet resistance of the LAO=STO interface upon application of a parallel magnetic field [10][11][12][13]. An explanation has been proposed [13,14] in terms of the Kondo effect: Variation of the electron density or magnetic field drives a quantum phase transition between a highresistance correlated electronic phase with screened magnetic impurities and a low-resistance phase of polarized impurity moments. The relevance of spin-orbit coupling for magnetotransport is widely appreciated [10,[14][15][16][17][18][19], but it was generally believed to be too weak an effect to provide a single-particle explanation of the giant magnetoresistance.In this work we provide experimental data (combining magnetic field, gate voltage, and temperature profiles for the resistance of the LAO=STO interface) and theoretical calculations that support an explanation fully within the single-particle context of Boltzmann transport. The key ingredients are the combination of spin-orbit coupling, band anisotropy, and finite-range electrostatic impurity scattering.The thermal insensitivity of the giant magnetoresistance [10,11], in combination with a striking correspondence that we have observed between the gate voltage and temperature dependence of the effect, are features that are difficult to reconcile with the thermally fragile Kondo interpretationbut fit naturally in the semiclassical Boltzmann description.We first present the experimental data and then turn to the theoretical de...

show abstract

Large modulation of the Shubnikov–de Haas oscillations by the Rashba interaction at the LaAlO₃/SrTiO₃ interface

Cited by 55 publications

References 40 publications

Growth-induced electron mobility enhancement at the LaAlO3/SrTiO3 interface

Growth-induced electron mobility enhancement at the LaAlO3/SrTiO3 interface

Research Update: Conductivity and beyond at the LaAlO3/SrTiO3 interface

Giant Negative Magnetoresistance Driven by Spin-Orbit Coupling at theLaAlO3/SrTiO3Interface

Contact Info

Product

Resources

About

Large modulation of the Shubnikov–de Haas oscillations by the Rashba interaction at the LaAlO3/SrTiO3 interface

Cited by 55 publications

References 40 publications

Growth-induced electron mobility enhancement at the LaAlO3/SrTiO3 interface

Growth-induced electron mobility enhancement at the LaAlO3/SrTiO3 interface

Research Update: Conductivity and beyond at the LaAlO3/SrTiO3 interface

Giant Negative Magnetoresistance Driven by Spin-Orbit Coupling at theLaAlO3/SrTiO3Interface

Contact Info

Product

Resources

About

Large modulation of the Shubnikov–de Haas oscillations by the Rashba interaction at the LaAlO₃/SrTiO₃ interface