Large internal dipole moment in InGaN/GaN quantum dots

Остапенко, І. А.; Hönig, Gerald; Kindel, Christian; Rodt, Sven; Strittmatter, A.; Hoffmann, A.; Bimberg, D.

doi:10.1063/1.3477952

Cited by 56 publications

(41 citation statements)

References 22 publications

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“…The disadvantage of the internal electric fields, however, is the spatial separation of the electron and hole wavefunctions that reduces the radiative recombination efficiency due to the quantum confined Stark effect (QCSE), and which leads to long exciton lifetimes increasing the time-jitter on the emission from a single photon source and reducing the available repetition rate. These in-built electric fields may also be responsible for spectral diffusion (the variation of the QD emission wavelength on a timescale of a few seconds), which makes maintaining resonance between a QD and an optical cavity difficult 5 . Growth of InGaN QDs along non-and semi-polar orientations is thus of interest since the internal electric fields can be greatly reduced or eliminated 6,7 .…”

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confidence: 99%

Non-polar (11-20) InGaN quantum dots with short exciton lifetimes grown by metal-organic vapor phase epitaxy

Zhu

Oehler

Reid

et al. 2013

Applied Physics Letters

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We report on the optical characterization of non-polar a-plane InGaN quantum dots (QDs) grown by metal-organic vapor phase epitaxy using a short nitrogen anneal treatment at the growth temperature. Spatial and spectral mapping of sub-surface QDs have been achieved by cathodoluminescence at 8 K. Microphotoluminescence studies of the QDs reveal resolution limited sharp peaks with typical linewidth of 1 meV at 4.2 K. Time-resolved photoluminescence studies suggest the excitons in these QDs have a typical lifetime of 538 ps, much shorter than that of the c-plane QDs, which is strong evidence of the significant suppression of the internal electric fields.

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confidence: 99%

Non-polar (11-20) InGaN quantum dots with short exciton lifetimes grown by metal-organic vapor phase epitaxy

Zhu

Oehler

Reid

et al. 2013

Applied Physics Letters

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“…The presence of the internal electric field may also be responsible for the variation in the emission wavelength and linewidth over time (spectral diffusion). 6 Theoretical work has suggested that growth in the non-polar orientations may eliminate the in-plane electric field. 7 Previous work by Zhu et al 8 has demonstrated the growth of non-polar a-plane InGaN QDs by the modified droplet epitaxy (MDE) method with exciton lifetimes an order of magnitude smaller than comparable polar QDs, 9 and which exhibit improved temperature stability 10 and Rabi oscillations.…”

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confidence: 99%

Growth of non-polar (11-20) InGaN quantum dots by metal organic vapour phase epitaxy using a two temperature method

et al. 2014

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Non-polar (11-20) InGaN quantum dots (QDs) were grown by metal organic vapour phase epitaxy. An InGaN epilayer was grown and subjected to a temperature ramp in a nitrogen and ammonia environment before the growth of the GaN capping layer. Uncapped structures with and without the temperature ramp were grown for reference and imaged by atomic force microscopy. Micro-photoluminescence studies reveal the presence of resolution limited peaks with a linewidth of less than ∼500 μeV at 4.2 K. This linewidth is significantly narrower than that of non-polar InGaN quantum dots grown by alternate methods and may be indicative of reduced spectral diffusion. Time resolved photoluminescence studies reveal a mono-exponential exciton decay with a lifetime of 533 ps at 2.70 eV. The excitonic lifetime is more than an order of magnitude shorter than that for previously studied polar quantum dots and suggests the suppression of the internal electric field. Cathodoluminescence studies show the spatial distribution of the quantum dots and resolution limited spectral peaks at 18 K.

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“…It establishes that the equation governing the dynamics of the excited-state population, n(t) = |c(t)| 2 , for an initially excited QE is The spheres radius is 120 nm (so that 1 δ 10 nm), and µ E = 1.5 e · nm (InGaN/GaN quantum dots at 3 eV [25]). The emitter is at resonance with the lowest (dipolar) SP (b) and with the pseudomode (c) maxima in Figure 2(a), respectively.…”

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confidence: 99%

Transformation Optics Approach to Plasmon-Exciton Strong Coupling in Nanocavities

et al. 2016

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We investigate the conditions yielding plasmon-exciton strong coupling at the single emitter level in the gap between two metal nanoparticles. A quasi-analytical transformation optics approach is developed that makes possible a thorough exploration of this hybrid system incorporating the full richness of its plasmonic spectrum. This allows us to reveal that by placing the emitter away from the cavity center, its coupling to multipolar dark modes of both even and odd parity increases remarkably. This way, reversible dynamics in the population of the quantum emitter takes place in feasible implementations of this archetypal nanocavity.PACS numbers: 73.20. Mf, 42.50.Nn, 71.36.+c Plasmon-exciton-polaritons (PEPs) are hybrid lightmatter states that emerge from the electromagnetic (EM) interaction between surface plasmons (SPs) and nearby quantum emitters (QEs) [1,2]. Crucially, PEPs only exist when these two subsystems are strongly coupled, i.e., they exchange EM energy coherently in a time scale much shorter than their characteristic lifetimes. Recently, much attention has focused on PEPs, since they combine the exceptional light concentration ability of SPs with the extreme optical nonlinearity of QEs. These two attributes makes them promising platforms for the next generation of quantum nanophotonic components [3].A quantum electrodynamics description of plasmonic strong coupling of a single QE has been developed for a flat metal surface [4], and isolated [5,6] and distant nanoparticles [7][8][9], where SP hybridization is not fully exploited. From the experimental side, in recent years, PEPs have been reported in emitter ensembles [10][11][12][13], in which excitonic nonlinearities are negligible [14][15][16]. Only very recently, thanks to advances in the fabrication and characterization of large Purcell enhancement nanocavities [17][18][19], far-field signatures of plasmonexciton strong coupling for single molecules have been reported experimentally [20].In this Letter, we theoretically investigate the plasmonic coupling of a single emitter in a paradigmatic cavity: the nanometric gap between two metallic particles [13,19,20]. We consider spherical-shaped nanoparticles, and develop a transformation optics (TO) [21,22] approach that fully accounts for the rich EM spectrum that originates from SP hybridization across the gap. Our method, which is the first application of TO concepts to treat quantum optical phenomena, yields quasianalytical insight into the Wigner-Weisskopf problem [23] for these systems, and enables us to reveal the prescriptions that nanocavities must fulfil to support single QE PEPs. (1) level system (with transition frequency ω E and z-oriented arXiv:1605.09443v2 [cond-mat.mes-hall]

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Large internal dipole moment in InGaN/GaN quantum dots

Cited by 56 publications

References 22 publications

Non-polar (11-20) InGaN quantum dots with short exciton lifetimes grown by metal-organic vapor phase epitaxy

Non-polar (11-20) InGaN quantum dots with short exciton lifetimes grown by metal-organic vapor phase epitaxy

Growth of non-polar (11-20) InGaN quantum dots by metal organic vapour phase epitaxy using a two temperature method

Transformation Optics Approach to Plasmon-Exciton Strong Coupling in Nanocavities

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