Large-grained poly-Si films on ZnO:Al coated glass substrates

Temperature stability of ZnO:Al film properties for poly-Si thin-film devices

“…14 As the films do not show structural degradation but rather an improved crystallinity, Minami et al suggested oxygen to be responsible for both the decreased carrier density and mobility upon annealing in air. 15 Only recently the formation of poly-Si layers on ZnO:Al coated glass using the ALILE process has been introduced, 16,17 but no comments on the evolution of ZnO properties were given.…”

“…The samples annealed at 425 and 450°C were annealed for 16 h and the samples annealed between 475 and 525°C were annealed for 4 h. Finally, the resulting top layer ͑Al and Si islands͒ was removed by chemical mechanical polishing ͑CMP͒. Therefore, the resulting structure is glass/ZnO:Al/ poly-Si with an average silicon grain size of 5 m. 17 For the SPC-based experiments, intrinsic a-Si layers were deposited on ZnO:Al coated glass by e-beam evaporation at room temperature. The thickness of the a-Si layer was about 290 nm.…”

Growth of polycrystalline silicon on glass for thin-film solar cells

“…The crystallographic grain orientation is color encoded as follows: red, green, and blue correspond to (1 0 0), (1 1 0) and (1 1 1), respectively. The poly-Si film on bare glass features an average grain size of 7 mm and a maximum grain size of 18 mm [21]. With an average grain size of 5 mm and a maximum grain size of 16 mm the poly-Si film on ZnO:Al-coated glass features slightly smaller grain sizes [21].…”

In situ micro-Raman spectroscopic study of laser-induced crystallization of amorphous silicon thin films on aluminum-doped zinc oxide substrate

“…Sontheimer et al [10] reported that the crystalline Si films on AZO exhibited smaller grain size and higher density than the Si films on glass did using solid phase crystallization, which was mainly due to the difference in initial a-Si films property. Lee et al [11] also reported that the crystalline Si films on AZO exhibited smaller grain size compared with the Si films on glass did using aluminum induced crystallization. While Jung et al [12] observed larger grain size of crystalline Si films on AZO than that of Si films on glass using aluminum induced crystallization, ascribed to the difference in the diffused Si concentration into Al layer.…”

“…Many investigations have focused on the structure of crystalline Si films on AZO substrate [4,[8][9][10][11][12], different structures of crystalline Si films on glass and AZO substrates have been revealed. Sontheimer et al [10] reported that the crystalline Si films on AZO exhibited smaller grain size and higher density than the Si films on glass did using solid phase crystallization, which was mainly due to the difference in initial a-Si films property.…”