In situ micro-Raman spectroscopic study of laser-induced crystallization of amorphous silicon thin films on aluminum-doped zinc oxide substrate

Wang, Weiyan; Huang, Jinhua; Lu, Yuehui; Yang, Ye; Song, Weijie; Tan, Ruiqin; Dai, Shixun; Zhou, Jun

doi:10.1007/s10854-011-0588-2

Cited by 8 publications

(5 citation statements)

References 29 publications

(41 reference statements)

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“…Vibration related to α-Al 2 O 3 were found at 416, 433, 507 and 604 cm -1 , indicating a stretching of the Al-O bound in this structure [10]. Although it may be related to alumina, as mentioned, the peak at 507 cm -1 most probably can be associated to silicon [11]. In this case, the Si would come from the substrate [7], as discussed before, in good agreement with some peaks in the X-ray diffractograms.…”

mentioning

confidence: 63%

Al2O3 Obtained through Resistive Evaporation for Use as Insulating Layer in Transparent Field Effect Transistor

Boratto

Scalvi

Machado

2014

AMR

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Alumina thin films have been obtained by resistive evaporation of Al layer, followed by thermal oxidation achieved by annealing in appropriate atmosphere (air or O2-rich), with variation of annealing time and temperature. Optical and structural properties of the investigated films reveal that the temperature of 550°C is responsible for fair oxidation. Results of surface electrical resistivity, Raman and infrared spectroscopies are in good agreement with this finding. X-ray and Raman data also suggest the crystallization of Si nuclei at glass substrate-alumina interface, which would come from the soda-lime glass used as substrate. The main goal in this work is the deposition of alumina on top of SnO2 to build a transparent field-effect transistor. Some microscopy results of the assembled SnO2/Al2O3 heterostructure are also shown.

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mentioning

confidence: 63%

Al2O3 Obtained through Resistive Evaporation for Use as Insulating Layer in Transparent Field Effect Transistor

Boratto

Scalvi

Machado

2014

AMR

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“…FTIR results 16 are in good agreement with Raman data, presenting characteristic vibration of aluminum oxide. In Figure 3c, the most intense peak is shown about 507cm -1 , and although it may be related to alumina, most probably it can be associated to crystalline silicon 27,28 . In this case, the Si would be originated from the substrate 24,25 , diffusing to the interface substrate/Al, as discussed before, in good agreement with some peaks found out the XRD diffractograms.…”

Section: Resultsmentioning

confidence: 98%

Heterojunction between Al2O3 and SnO2 thin films for application in transparent FET

et al. 2014

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Alternative materials for use in electronic devices have grown interest in the past recent years. In this paper, the heterojunction SnO 2 /Al 2 O 3 is tested concerning its use as a transparent insulating layer for use in FETs. The alumina layer is obtained by thermal annealing of metallic Al layer, deposited by resistive evaporation technique. Combination of undoped SnO 2 , deposited by sol-gel-dip-coating technique, and Al thermally annealed in O 2 -rich atmosphere, leads to fair insulation when the number of aluminum oxide layers is 4, with 0.3% of the current lost through the gate terminal as leakage current. This insulation is not obtained for devices with alumina layer treated for long time, under room atmosphere, due to degradation of the insulating film and interfusion with the conduction channel even using Sb-doped SnO 2 . The annealing of Al deposited on soda-lime glass substrate leads also to the formation of a Si layer, crystallized at Substrate/Al 2 O 3 interface. The conclusion is that for an efficient insulation the thermal annealing must be short and then, O 2 -rich atmospheres are preferred.

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“…The laser-induced crystallization (LIC) of hydrogenated amorphous silicon (a-Si:H) has been a subject of extensive research in recent years, motivated predominantly by technological applications to thin film semiconductors. LIC studies instrumented by Raman spectroscopy appeared more recently [1][2][3][4][5], enabling in situ quantification of the phase composition, along with an indirect estimate of the sample temperature and other structural properties [6,7]. The main advantage of this approach is that the same laser may simultaneously control the LIC process and also serve as the Raman excitation laser source.…”

Section: Introductionmentioning

confidence: 99%

Kinetics of the laser-induced solid phase crystallization of amorphous silicon—Time-resolved Raman spectroscopy and computer simulations

Očenášek

Novák

Prušáková

2017

Applied Surface Science

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This study demonstrates that a laser-induced crystallization instrumented with Raman spectroscopy is, in general, an effective tool to study the thermally activated crystallization kinetics. It is shown, for the solid phase crystallization of an amorphous silicon thin film, that the integral intensity of Raman spectra corresponding to the crystalline phase grows linearly in the time-logarithmic scale. A mathematical model, which assumes random nucleation and crystal growth, was designed to simulate the crystallization process in the non-uniform temperature field induced by laser. The model is based on solving the Eikonal equation and the Arhenius temperature dependence of the crystal nucleation and the growth rate. These computer simulations successfully approximate the crystallization process kinetics and suggest that laser-induced crystallization is primarily thermally activated.

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In situ micro-Raman spectroscopic study of laser-induced crystallization of amorphous silicon thin films on aluminum-doped zinc oxide substrate

Cited by 8 publications

References 29 publications

Al<sub>2</sub>O<sub>3</sub> Obtained through Resistive Evaporation for Use as Insulating Layer in Transparent Field Effect Transistor

Al<sub>2</sub>O<sub>3</sub> Obtained through Resistive Evaporation for Use as Insulating Layer in Transparent Field Effect Transistor

Heterojunction between Al2O3 and SnO2 thin films for application in transparent FET

Kinetics of the laser-induced solid phase crystallization of amorphous silicon—Time-resolved Raman spectroscopy and computer simulations

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