2014
DOI: 10.1590/1516-1439.285114
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Heterojunction between Al2O3 and SnO2 thin films for application in transparent FET

Abstract: Alternative materials for use in electronic devices have grown interest in the past recent years. In this paper, the heterojunction SnO 2 /Al 2 O 3 is tested concerning its use as a transparent insulating layer for use in FETs. The alumina layer is obtained by thermal annealing of metallic Al layer, deposited by resistive evaporation technique. Combination of undoped SnO 2 , deposited by sol-gel-dip-coating technique, and Al thermally annealed in O 2 -rich atmosphere, leads to fair insulation when the number o… Show more

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Cited by 10 publications
(10 citation statements)
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“…Resistivity is ρ = 1.1 ± 0.2Ω·m in films spun from freshly prepared solution. However, it is significantly higher, ρ = 220 ± 40 Ω·m, when the aged solution is utilized: this is a relatively high value for doped SnO 2 . The transconductance of TFTs, measured at a drain voltage of 7 V while varying the gate voltage, is also different by about two orders of magnitude, (2.9 ± 0.6) × 10 −8 Ω −1 and (2.4 ± 0.3) × 10 −6 Ω −1 , for SbTO devices prepared from aged and fresh solutions, respectively.…”
Section: Resultsmentioning
confidence: 96%
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“…Resistivity is ρ = 1.1 ± 0.2Ω·m in films spun from freshly prepared solution. However, it is significantly higher, ρ = 220 ± 40 Ω·m, when the aged solution is utilized: this is a relatively high value for doped SnO 2 . The transconductance of TFTs, measured at a drain voltage of 7 V while varying the gate voltage, is also different by about two orders of magnitude, (2.9 ± 0.6) × 10 −8 Ω −1 and (2.4 ± 0.3) × 10 −6 Ω −1 , for SbTO devices prepared from aged and fresh solutions, respectively.…”
Section: Resultsmentioning
confidence: 96%
“…However, it is significantly higher, q = 220 AE 40 ΩÁm, when the aged solution is utilized: this is a relatively high value for doped SnO 2 . 5,20,21,[25][26][27] The transconductance of TFTs, measured at a drain voltage of 7 V while varying the gate voltage, is also different by about two orders of magnitude, (2.9 AE 0.6) 9 10 À8 Ω À1 and (2.4 AE 0.3) 9 10 À6 Ω À1 , for SbTO devices prepared from aged and fresh solutions, respectively. Consequently, the differences in transconductance mirror the differences in resistivity and corroborate the importance of the "history" of the starting solution in the electrical properties of SbTO.…”
Section: Resultsmentioning
confidence: 99%
“…CdTe/SnO 2 heterojunction has been proposed for solar cells devices [14] since the properties of CdTe, one of the best candidates for solar energy conversion, can be modulated by coupling with other materials. The combination of SnO 2 with Al 2 O 3 layer deposited by similar processes of the films deposition used in this paper, has led to a simple device with a potential combination for application as transparent transistors [15][16][17].…”
Section: Introductionmentioning
confidence: 99%
“…In order to find a substitute for the well-established silicon dioxide (SiO 2 ) in metal-oxide-semiconductor field-effect transistors (MOSFETs) [6], dielectric oxides with high dielectric constant (high-k) have been investigated, such as hafnia (HfO 2 ), alumina (Al 2 O 3 ), and zirconia (ZrO 2 ), because they are suitable to improve the channel modulation in MOSFETs through reduced tunneling current, even for small thicknesses [7][8][9]. Zirconia is a favorable alternative due to its high dielectric constant (k = 18-26), wide bandgap (4.7-7.8 eV), good thermal stability against silicate formation, excellent chemical inertness, high breakdown field, and good catalytic properties [2,3,10,11].…”
Section: Introductionmentioning
confidence: 99%