Large Domains of Continuous Grain Silicon on Glass Substrate for High-Performance TFTs

Mizuki, Takeshi; Matsuda, Junko; Nakamura, Yusuke; Takagi, Junkou; Yoshida, Toshiyuki

doi:10.1109/ted.2003.821770

Cited by 41 publications

(35 citation statements)

References 10 publications

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“…However, TFTs have been fabricated by combining MILC with ELC. In this method, the silicide was gettered to ion-implanted regions corresponding to the source and drain electrodes and achieved a μ FEn value of 320 cm 2 /Vs (Mizuki et al, 2004).…”

Section: Metal-induced Lateral Crystallizationmentioning

confidence: 99%

Oriented Lateral Growth and Defects in Polycrystalline-Silicon Thin Films on Glass Substrates

Kitahara¹,

Hara²

2012

Crystallization - Science and Technology

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Section: Metal-induced Lateral Crystallizationmentioning

confidence: 99%

Oriented Lateral Growth and Defects in Polycrystalline-Silicon Thin Films on Glass Substrates

Kitahara¹,

Hara²

2012

Crystallization - Science and Technology

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“…The uniform large-domain MIC poly-Si with small quantities of residual nickel and grain boundary defect is desirable for large area electronics on glass, because thin film transistors built on this kind of poly-Si have shown high carrier field effective mobility, low leakage current and good device uniformity [4,5]. Metal induced lateral crystallization (MILC) is a demonstrated low cost technology to obtain long needle-like grain poly-Si by defining inducing windows in ~100 nm thick oxide layer between aSi and nickel catalyst [5].…”

Section: Introduction Metal Induced Crystallization (Mic)mentioning

confidence: 99%

Metal induced crystallization of a‐Si using a nano‐layer of silicon oxide mask (MMIC)

Meng

et al. 2010

Phys. Status Solidi (c)

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A nano‐layer of silicon oxide mask with inducing windows was prepared on a‐Si. The inducing windows pre‐defined the crystalline nucleation positions. The morphology of the resulted MMIC poly‐Si depends on the width of the inducing windows, the thickness of silicon oxide outside the inducing windows, and the area density of the nickel inducing medium. Poly‐Si composed of continuous zonal domain (CZD) in the same width was obtained under optimal conditions. In this case, metal induced nucleation took place in some isolated sites inside the inducing windows, the crystallization of a‐Si proceeded around those isolated nuclei along radial direction inside the inducing windows, and then along radial or lateral direction outside the inducing windows. P‐channel CZD poly‐Si TFTs exhibited a field effect mobility (μFE) of ∼65 cm2/V·s, a subthreshold swing (S) of 0.56 V/dec, a threshold voltage (Vth) of –3.5 V, and a ratio of on‐state to off‐state drain currents of 2.6×107. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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“…It is widely recognized that large domain MIC polySi has locally single-crystal-like electrical properties, low grain boundary, low intra-grain defects and low mis-orientation angles. [1][2][3][4] Many techniques, for example metal-induced unilateral crystallization (MIUC), 1 continuous grain silicon (CGS), 2 metal-induced crystallization through a cap layer (MICC), 3 and nanocap-assisted crystallization (NAC) 4 have been proposed to prepare large-domain MIC poly-Si. Each of these techniques has its drawbacks, however.…”

Section: Introductionmentioning

confidence: 99%

“…1 Glass substrate shrinkage during the MIUC thermal treatment process can, moreover, cause marked misalignment. The CGS technique requires excimer laser annealing after metal induced crystallization, 2 and this would turn the MIC technique, originally developed as a low cost batch process, back to a high cost process. The MICC and NAC techniques require the deposition of a SiN x and a SiO 2 nano-cap buffer layer, respectively, on a-Si:H films and careful sputtering of an ultra-low density of Ni particles on the buffer layer.…”

Section: Introductionmentioning

confidence: 99%

Super-Large Domain Metal-Induced Radially Crystallized Poly-Si Made Using Ni(NO3)2/NH4OH Mixed Solution

Meng

Zhao

et al. 2007

Journal of Elec Materi

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By using an aqueous solution of Ni(NO 3 ) 2 /NH 4 OH for formation of Ni media on a-Si, disk-like super-large domain metal-induced radially crystallized (S-MIRC) poly-Si was prepared. The process requires no buffer layer deposition on a-Si. The prepared S-MIRC poly-Si has an average domain size of up to 60 lm, highest hole Hall mobility of 27.1 cm 2 V -1 s -1 , and highest electron Hall mobility of 45.6 cm 2 V -1 s -1 . Poly-Si TFT made on super-large-domain S-MIRC poly-Si had high mobility of~105.8 cm 2 V -1 s -1 , steep sub-threshold slope of~1.0 V decade -1 , high on/off state current ratio of >10 7 and low threshold voltage of~-6.9 V. A simultaneous Ni-collected and induced crystallization model is proposed to explain the growth kinetics of S-MIRC poly-Si.

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Large Domains of Continuous Grain Silicon on Glass Substrate for High-Performance TFTs

Cited by 41 publications

References 10 publications

Oriented Lateral Growth and Defects in Polycrystalline-Silicon Thin Films on Glass Substrates

Oriented Lateral Growth and Defects in Polycrystalline-Silicon Thin Films on Glass Substrates

Metal induced crystallization of a‐Si using a nano‐layer of silicon oxide mask (MMIC)

Super-Large Domain Metal-Induced Radially Crystallized Poly-Si Made Using Ni(NO3)2/NH4OH Mixed Solution

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