Langmuir films and uniform, large area, transparent coatings of chemically exfoliated MoS<sub>2</sub> single layers

Zhang, Yefeng; Xu, Luzhu; Walker, Wesley R.; Tittle, Collin M.; Backhouse, C.; Pope, Michael A.

doi:10.1039/c7tc02637d

Cited by 35 publications

(59 citation statements)

References 59 publications

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“…5). This corresponds to an average exfoliated number of layers of 17 by taking account of the theoretical specific surface area of single layer MoS 2 of 636 m 2 /g [33]. Considering the large overall quantities of MoS 2 exfoliated, it is sound to deem this approach highly efficient.…”

Section: Resultsmentioning

confidence: 99%

Synergistic Exfoliation of MoS2 by Ultrasound Sonication in a Supercritical Fluid Based Complex Solvent

et al. 2019

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Molybdenum disulfide (MoS2) is an extremely intriguing low-D layered material due to its exotic electronic, optical, and mechanical properties, which could be well exploited for numerous applications to energy storage, sensing, and catalysis, etc., provided a sufficiently low number of layers is achieved. A facile exfoliation strategy that leads to the production of few-layered MoS2 is proposed wherein the exfoliation efficacy could be synergistically boosted to > 90% by exploiting ultrasound sonication in supercritical CO2 in conjunction with N-methyl-2-pyrrolidone (NMP) as the intercalating solvent, which is superior to general practiced liquid exfoliation methods wherein only the supernatant is collected to avoid the majority of unexfoliated sediments. The facile and fast exfoliation technique suggests an exciting and feasible solution for scalable production of few-layered MoS2 and establishes a platform that contributes to fulfilling the full potential of this versatile two-dimensional material.

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Section: Resultsmentioning

confidence: 99%

Synergistic Exfoliation of MoS2 by Ultrasound Sonication in a Supercritical Fluid Based Complex Solvent

et al. 2019

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“…Figure 2b shows the photoluminescence spectrum of the monolayer MoS 2 sample at different points. The photoluminescence spectrum of monolayer MoS 2 on SiO 2 /Si substrate had I and B exciton peaks, the strongest I exciton peak position of monolayer MoS 2 was at 684.6 ± 0.5 nm, which could be explained by the direct exciton excitation [22]. The corresponding electron volt was at 1.82 ± 0.02 eV through the conversion relationship between wavelength and electron volts, which was consistent with the direct band gap width of monolayer MoS 2 .…”

Section: The Growth and Characterization Of Monolayer Mos2mentioning

confidence: 99%

Probing the Field-Effect Transistor with Monolayer MoS2 Prepared by APCVD

et al. 2019

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The two-dimensional materials can be used as the channel material of transistor, which can further decrease the size of transistor. In this paper, the molybdenum disulfide (MoS2) is grown on the SiO2/Si substrate by atmospheric pressure chemical vapor deposition (APCVD), and the MoS2 is systematically characterized by the high-resolution optical microscopy, Raman spectroscopy, photoluminescence spectroscopy, and the field emission scanning electron microscopy, which can confirm that the MoS2 is a monolayer. Then, the monolayer MoS2 is selected as the channel material to complete the fabrication process of the back-gate field effect transistor (FET). Finally, the electrical characteristics of the monolayer MoS2-based FET are tested to obtain the electrical performance. The switching ratio is 103, the field effect mobility is about 0.86 cm2/Vs, the saturation current is 2.75 × 10−7 A/μm, and the lowest gate leakage current is 10−12 A. Besides, the monolayer MoS2 can form the ohmic contact with the Ti/Au metal electrode. Therefore, the electrical performances of monolayer MoS2-based FET are relatively poor, which requires the further optimization of the monolayer MoS2 growth process. Meanwhile, it can provide the guidance for the application of monolayer MoS2-based FETs in the future low-power optoelectronic integrated circuits.

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“…In this paper, different layers of MoS 2 are grown on SiO 2 /Si and sapphire substrates by atmospheric pressure chemical vapor deposition (APCVD) [16]. The effects of different laser wavelengths, powers, layer number, and substrate on the optical properties of MoS 2 are researched by the optical microscopy (OM), Raman spectroscopy (Raman), photoluminescence spectroscopy (PL), and atomic force microscopy (AFM), systematically, to master the luminescence laws.…”

Section: Introductionmentioning

confidence: 99%

Probing the Optical Properties of MoS2 on SiO2/Si and Sapphire Substrates

et al. 2019

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As an important supplementary material to graphene in the optoelectronics field, molybdenum disulfide (MoS2) has attracted attention from researchers due to its good light absorption capacity and adjustable bandgap. In this paper, MoS2 layers are respectively grown on SiO2/Si and sapphire substrates by atmospheric pressure chemical vapor deposition (APCVD). Atomic force microscopy, optical microscopy, and Raman and photoluminescence spectroscopy are used to probe the optical properties of MoS2 on SiO2/Si and sapphire substrates systematically. The peak shift between the characteristic A1g and E12g peaks increases, and the I peak of the PL spectrum on the SiO2/Si substrate redshifts slightly when the layer numbers were increased, which can help in obtaining the layer number and peak position of MoS2. Moreover, the difference from monolayer MoS2 on the SiO2/Si substrate is that the B peak of the PL spectrum has a blueshift of 56 meV and the characteristic E12g peak of the Raman spectrum has no blueshift. The 1- and 2-layer MoS2 on a sapphire substrate had a higher PL peak intensity than that of the SiO2/Si substrate. When the laser wavelength is transformed from 532 to 633 nm, the position of I exciton peak has a blueshift of 16 meV, and the PL intensity of monolayer MoS2 on the SiO2/Si substrate increases. The optical properties of MoS2 can be obtained, which is helpful for the fabrication of optoelectronic devices.

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Langmuir films and uniform, large area, transparent coatings of chemically exfoliated MoS₂ single layers

Abstract: A simple method to create large area monolayers and multi-layer films of chemically exfoliated MoS2 is presented.

Cited by 35 publications

References 59 publications

Synergistic Exfoliation of MoS2 by Ultrasound Sonication in a Supercritical Fluid Based Complex Solvent

Synergistic Exfoliation of MoS2 by Ultrasound Sonication in a Supercritical Fluid Based Complex Solvent

Probing the Field-Effect Transistor with Monolayer MoS2 Prepared by APCVD

Probing the Optical Properties of MoS2 on SiO2/Si and Sapphire Substrates

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Langmuir films and uniform, large area, transparent coatings of chemically exfoliated MoS2 single layers

Abstract: A simple method to create large area monolayers and multi-layer films of chemically exfoliated MoS2 is presented.

Cited by 35 publications

References 59 publications

Synergistic Exfoliation of MoS2 by Ultrasound Sonication in a Supercritical Fluid Based Complex Solvent

Synergistic Exfoliation of MoS2 by Ultrasound Sonication in a Supercritical Fluid Based Complex Solvent

Probing the Field-Effect Transistor with Monolayer MoS2 Prepared by APCVD

Probing the Optical Properties of MoS2 on SiO2/Si and Sapphire Substrates

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Langmuir films and uniform, large area, transparent coatings of chemically exfoliated MoS₂ single layers