Laboratory LPP EUV reflectometer working with non-polarized radiation

Loyen, L. van; Böttger, Thomas; Schädlich, Stefan; Braun, Stefan; Foltyn, Thomas; Leson, Andreas; Scholze, Frank; Müllender, S.

doi:10.1016/j.apsusc.2005.01.113

Cited by 8 publications

(7 citation statements)

References 6 publications

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“…This is a critical difference as compared to previously reported estimate for the same DPP source, 2 based on measurements performed at the source level where the amount of DUV OoB at IF was extrapolated on the basis of various assumptions rather than directly quantified; thus resulting in an overestimated result. 20 Having estimated as accurately as possible all the required parameters, the model is able to predict the DUV=EUV ratio at the wafer level. Filters with known transmission and an aluminum mirror with known reflectivity were used.…”

Section: A Oob Model Predictionsmentioning

confidence: 99%

Metrology development for extreme ultraviolet lithography: Flare and out-of-band qualification

Lorusso

Hendrickx

Davydova

et al. 2011

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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Articles you may be interested inCharacterization of out-of-band radiation and plasma parameters in laser-produced Sn plasmas for extreme ultraviolet lithography light sources Extreme ultraviolet lithography (EUVL) is the leading candidate for lithography beyond the 22 nm half-pitch device manufacturing node. These geometries impose tighter requirements for standard critical dimension metrology and call for new strategies able to quantify and monitor extreme ultraviolet (EUV) specific parameters. In this paper, the approaches to measure two key EUV imaging parameters, namely flare and out-of-band (OoB) radiation, are discussed. EUV sources are known to emit a broad spectrum of wavelengths ranging from EUV to deep ultraviolet (DUV) and beyond. As the DUV can contribute to the photoresist exposure and degrade imaging performance, it is critical to accurately determine the amount of DUV OoB in EUVL exposure tools at the wafer level. In this paper, a methodology using an aluminum-coated reticle to measure the DUV=EUV ratio in resist is discussed. Such a mask is able to provide quantitative in situ information on the scanner DUV content thanks to its ability to transmit DUV and absorb EUV. The experimental OoB results for two EUVL tools are reported and compared with modeling predictions. Flare in EUVL is caused by light scattered by the surface roughness of the optical elements and has a larger impact as compared to optical lithography. As a consequence, a precise and accurate flare metrology is essential to guarantee a proper qualification of the effect, as well as to implement an effective compensation strategy. However, the flare level estimate has been historically based on operator and tool-dependent procedures that are unable to meet the requirements for accuracy and precision dictated by EUVL. A robust in-line approach to flare metrology is developed and qualified. As in the case of OoB, experimental flare results for two EUVL tools are reported. The experimental data are compared to full-chip simulations using the point spread function of the tool's optical system.

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Section: A Oob Model Predictionsmentioning

confidence: 99%

Metrology development for extreme ultraviolet lithography: Flare and out-of-band qualification

Lorusso

Hendrickx

Davydova

et al. 2011

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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“…But with the availability of table-top EUV/XUV light sources (laser produced and gas discharge plasma sources), optics analysis is not limited to the synchrotron facilities any more. Still the main focus for EUV reflectometry/scatterometry setups is the characterization of EUVL components like optics and masks [26][27][28][29]. Aside from that, only little work seems to be going on with the application of EUV reflectometry for surface analysis [30].…”

Section: Euv/xuv Surface Analysis Using a Reflectometry Setupmentioning

confidence: 99%

Applications of Compact Laser-Driven EUV/XUV Plasma Sources

Bayer

Barkusky

Döring

et al. 2010

X-Ray Optics and Instrumentation

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We present an overview on the EUV/XUV activities of the Laser-Laboratorium Göttingen based on table-top laser-produced plasma (LPP) sources. As target materials, gaseous jets of noble gases or solid Gold are employed. In order to obtain high EUV fluence, a Schwarzschild objective consisting of two spherical mirrors with Mo/Si multilayer coatings is adapted to the source. By demagnified (10x) imaging of the Au plasma, an EUV spot with a maximum energy density of ∼1.3 J/cm2is generated (3 μm diameter, pulse duration 8.8 ns). First applications of this system reveal its potential for high-resolution modification and direct structuring of solid surfaces. Additionally, an EUV/XUV setup for structural analysis was developed. Using a gas puff target combined with a grazing incidence optics (Kirkpatrick-Baez arrangement), it offers the possibility to perform angular resolved reflectivity, diffraction, and scattering experiments. For chemical analysis of various samples, an NEXAFS setup was built, based on gaseous Krypton as a broadband emitter in the water-window range around the carbon K-edge (4.4 nm). Here, proof-of-principle for NEXAFS with lab-scaled XUV sources is given on polyimide as a reference.

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“…La focalisation est réalisée en deux temps : un miroir courbe en entrée permet la focalisation sagittale, et la focalisation tangentielle est réalisée par le réseau de sortie. La section du faisceau EUV au centre de l'enceinte expérimentale est actuellement de 1 × 10 mm 2 …”

Section: Mise En Formeunclassified

Réflectomètre à large spectre EUV pour la métrologie d'optiques

et al. 2006

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Résumé. Le Laboratoire Charles Fabry conçoit de nombreuses optiques dont certaines pour les applications dans le spectre EUV. Pour les besoins de caractérisation, il est nécessaire de posséder une métrologie à la longueur d'onde d'utilisation proche des moyens de fabrication. Ceci permet d'étudier les composants dès leur conception et de caractériser les optiques. Nous présentons ici les performances d'un réflectomètre automatisé EUV large spectre. Il a été développé dans le cadre de la centrale CEMOX 1 , initiée par le pôle PRaXO 2 .

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Laboratory LPP EUV reflectometer working with non-polarized radiation

Cited by 8 publications

References 6 publications

Metrology development for extreme ultraviolet lithography: Flare and out-of-band qualification

Metrology development for extreme ultraviolet lithography: Flare and out-of-band qualification

Applications of Compact Laser-Driven EUV/XUV Plasma Sources

Réflectomètre à large spectre EUV pour la métrologie d'optiques

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