Label-Free and Real-Time Immunodetection of the Avian Influenza A Hemagglutinin Peptide Using a Silicon Field-Effect Transistor Fabricated by a Nickel Self-Aligned Silicide Process

Hong, Hyobong; Park, Yang-Kyu; Kim, Jae-Yeon; Song, Ki-Bong; Choi, Chel‐Jong

doi:10.2320/matertrans.m2012068

Cited by 14 publications

(2 citation statements)

References 31 publications

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“…Currently, the SiNW-FET-based biosensor, as an emerging biological detection technology, could be used for protein [54], DNA [75], and microorganism detection [34], providing new solutions for infectious diseases and other health aspects. To date, SiNW-FETs have successfully detected many viruses, including Dengue [4], Influenza A H3N2 [76], H1N1 [77,78], H5N1 [79], and H5N2 [80]; they have also detected two different viruses simultaneously [81].…”

Section: Microbiological Detectionmentioning

confidence: 99%

Application of Silicon Nanowire Field Effect Transistor (SiNW-FET) Biosensor with High Sensitivity

Li,

Chen

et al. 2023

Sensors

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As a new type of one-dimensional semiconductor nanometer material, silicon nanowires (SiNWs) possess good application prospects in the field of biomedical sensing. SiNWs have excellent electronic properties for improving the detection sensitivity of biosensors. The combination of SiNWs and field effect transistors (FETs) formed one special biosensor with high sensitivity and target selectivity in real-time and label-free. Recently, SiNW-FETs have received more attention in fields of biomedical detection. Here, we give a critical review of the progress of SiNW-FETs, in particular, about the reversible surface modification methods. Moreover, we summarized the applications of SiNW-FETs in DNA, protein, and microbial detection. We also discuss the related working principle and technical approaches. Our review provides an extensive discussion for studying the challenges in the future development of SiNW-FETs.

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Section: Microbiological Detectionmentioning

confidence: 99%

Application of Silicon Nanowire Field Effect Transistor (SiNW-FET) Biosensor with High Sensitivity

Li,

Chen

et al. 2023

Sensors

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“…Recently, enzyme-linked immunodeficient assay technology technique which requires labelling of biomolecules is based on optical sensing to observe the specimen. However, it is mostly used in health diagnosis centres and to check the quality of areas [12]. In this regards, FET-based biosensor is capable for economical control of viruses diseases and inspection of bio hazards in environment [13][14][15].…”

Section: Introductionmentioning

confidence: 99%

Junctionless based dielectric modulated electrically doped tunnel FET based biosensor for label‐free detection

Chandan

Nigam

Sharma

2018

Micro & Nano Letters

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The fabrication complexity and cost effectiveness in nanoscale regime have been one of the major issues in the modern biosensor. Therefore, to overcome such issue, this study investigates a junctionless dielectrically modulated electrically doped tunnel field effect transistor (FET) as a biosensor for application of label free detection. In this work, the authors have been considered the n + heavily doped silicon layer and two isolate gates for the formation of intrinsic and p + source regions underneath the control gate (CG) and polarity gate (PG) with appropriate work functions and polarity bias over silicon body which are similar to that of conventional tunnel FET. The proposed device structure is immune against doping control issues, avoids thermal budget, and fabrication issues. Moreover, the formation of nanogap cavity embedded within the CG dielectric is performed by etching of CG dielectric region towards the PG side for the purpose of sensing the biomolecules. The sensing ability of the proposed device has been evaluated in terms of varying the dielectric constant and charge density of the biomolecules. However, transfer characteristics are also evaluated with the variation in thickness and length of the cavity. All the simulations have been performed using ATLAS technology computer aided design device simulator.

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Ge‐ and Ge_1−zSn_z‐Based Gate‐Underlap Dual Material Double Gate Tunnel Field Effect Transistor: Modeling, Optimization, and its Application to Biosensors

Shaw

Mukhopadhyay

2023

Physica Status Solidi (a)

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Herein, an n‐channel dual material double gate tunnel field effect transistor (DMDG‐TFET) with a gate–drain underlap using Ge and Ge1−zSnz is proposed. An analytical model has been developed to optimize the length of the underlap region for Ge and Ge–Sn alloy as the channel material. The ambipolarity shown by TFET has been utilized to perform a label‐free biosensing in response to the change of permittivity of the biomaterials used in the gate–drain underlap region. The use of Ge–Sn alloy as a channel material results in a lower ambipolar current but higher sensitivity to the presence of biomolecules. DMDG with workfunction (4 and 4.4 eV) is used to optimize the device performance. The analytical results have been validated by the results obtained using commercial software (Silvaco TCAD). A high sensitivity of the biosensor device is obtained by utilizing the tunnel FET ambipolar current with optimized gate underlap of LUD = 55 nm (for Ge) and LUD = 38 nm (for Ge–Sn alloy).

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Label-Free and Real-Time Immunodetection of the Avian Influenza A Hemagglutinin Peptide Using a Silicon Field-Effect Transistor Fabricated by a Nickel Self-Aligned Silicide Process

Cited by 14 publications

References 31 publications

Application of Silicon Nanowire Field Effect Transistor (SiNW-FET) Biosensor with High Sensitivity

Application of Silicon Nanowire Field Effect Transistor (SiNW-FET) Biosensor with High Sensitivity

Junctionless based dielectric modulated electrically doped tunnel FET based biosensor for label‐free detection

Ge‐ and Ge_1−zSn_z‐Based Gate‐Underlap Dual Material Double Gate Tunnel Field Effect Transistor: Modeling, Optimization, and its Application to Biosensors

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Label-Free and Real-Time Immunodetection of the Avian Influenza A Hemagglutinin Peptide Using a Silicon Field-Effect Transistor Fabricated by a Nickel Self-Aligned Silicide Process

Cited by 14 publications

References 31 publications

Application of Silicon Nanowire Field Effect Transistor (SiNW-FET) Biosensor with High Sensitivity

Application of Silicon Nanowire Field Effect Transistor (SiNW-FET) Biosensor with High Sensitivity

Junctionless based dielectric modulated electrically doped tunnel FET based biosensor for label‐free detection

Ge‐ and Ge1−zSnz‐Based Gate‐Underlap Dual Material Double Gate Tunnel Field Effect Transistor: Modeling, Optimization, and its Application to Biosensors

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Ge‐ and Ge_1−zSn_z‐Based Gate‐Underlap Dual Material Double Gate Tunnel Field Effect Transistor: Modeling, Optimization, and its Application to Biosensors