Application of Silicon Nanowire Field Effect Transistor (SiNW-FET) Biosensor with High Sensitivity

Li, Huiping; Li, Dujuan; Chen, Huiyi; Yue, Xiaojie; Fan, Kai; Dong, Linxi; Wang, Gaofeng

doi:10.3390/s23156808

Cited by 14 publications

(4 citation statements)

References 118 publications

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“…The bonding is verified by measuring the resistance change in the SiNWs before and after the bonding process. It was confirmed that the SiNW-based biosensor could detect amplicons at concentrations below 10 fM within 30 min [21].…”

Section: Current Application Of Epitaxial Semiconducting Nanostructuresmentioning

confidence: 67%

Plasmonic Modification of Epitaxial Nanostructures for the Development of a Highly Efficient SERS Platform

Dumiszewska,

Michałowska,

Nozka

et al. 2023

Crystals

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Epitaxy is the process of crystallization of monocrystalline layers and nanostructures on a crystalline substrate. It allows for the crystallization of various semiconductor layers on a finite quantity of semiconductor substrates, like GaAs, InP, GaP, InGaP, GaP, and many others. The growth of epitaxial heterostructures is very complicated and requires special conditions and the precise control of the growth temperature, the pressure in the reactor, and the flow of the precursors. It is used to grow epitaxial structures in lasers, diodes, detectors, photovoltaic structures, and so on. Semiconductors themselves are not suitable materials for application in surface-enhanced Raman spectroscopy (SERS) due to poor plasmonic properties in the UV/VIS range caused by missing free electrons in the conduction band due to the existing band gap. A plasmonic material is added on top of the nanostructured pattern, allowing for the formation of mixed photon–plasmon modes called localized surface plasmon-polaritons which stand behind the SERS effect. Typically, gold and silver are used as functional plasmonic layers. Such materials could be deposited via chemical or physical process. Attention has also been devoted to other plasmonic materials, like ones based on the nitrides of metals. The SERS performance of a functional surface depends both on the response of the plasmonic material and the morphology of the underlying semiconductor epitaxial layer. In the context of SERS, epitaxial growth allows for the fabrication of substrates with well-defined 3D nanostructures and enhanced electromagnetic properties. In this work, we described the possible potential plasmonic modification, composed of various coatings such as noble metals, TiN, and others, of well-developed epitaxial nanostructures for the construction of a new type of highly active SERS platforms. This abstract also highlights the role of epitaxial growth in advancing SERS, focusing on its principles, methods, and impact. Furthermore, this work outlines the potential of epitaxial growth to push the boundaries of SERS. The ability to design substrates with tailored plasmonic properties opens avenues for ultralow concentration detection.

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Section: Current Application Of Epitaxial Semiconducting Nanostructuresmentioning

confidence: 67%

Plasmonic Modification of Epitaxial Nanostructures for the Development of a Highly Efficient SERS Platform

Dumiszewska,

Michałowska,

Nozka

et al. 2023

Crystals

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“…Although CNT FET possesses numerous advantages over traditional silicon and other semiconductor materials, their widespread adoption has been hindered by the technology's high production cost [18]. Nanowire Field Effect Transistor (NW FET) has the potential to replace the conventional MOSFET where the channel is made of nanowire [19] [20].The dimension of this nanowire is considered to be 0.5nm. Various materials such as silicon, germanium, composed III-V materials, and II-IV materials are used for the channel.…”

Section: Emergence Of Various Semiconductor Devices Over Mosfetmentioning

confidence: 99%

FinFET to GAA MBCFET: A Review and Insights

Das,

Rajalekshmi,

James

2024

IEEE Access

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This review article presents a journey from Fin-shaped field effect transistor (FinFET) to gate-all-around multi-bridge channel field effect transistor (GAA MBCFET) technology, unraveling the evolution of semiconductor architectures. This article provides a concise yet insightful overview of the development of FinFET, exploring modified architectures, current trends, and associated constraints. The growing importance of other semiconductor materials instead of Si in FinFET or other technologies has been studied in detail. The article explores an emerging technology called 'GAA MBCFET', highlighting its advantages over FinFET. It also delves into the notable drawbacks and complex fabrication challenges associated with the upcoming GAA MBCFET technology. INDEX TERMS Gate-All-Around (GAA), Multi-Bridge Channel (MBC), Silicon on Insulator (SOI)

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“…Highly selective detection and quantitative analysis of biomolecules can be achieved by designing and constructing nanomaterials on the nanoscale, improving the synthesis methods of nanomaterials, 19 and constructing biosensors with multifunctionality and high sensitivity from nanomaterials. 20 Because of these advantages, nanomaterials have been increasingly used in the field of biosensing. 21,22 The combination of nanotechnology and biosensors shows broad application prospects in the current medical diagnostic field.…”

Section: Introductionmentioning

confidence: 99%