Nanowire Field Effect Transistors: Principles and Applications 2013
DOI: 10.1007/978-1-4614-8124-9_10
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Lab on a Wire: Application of Silicon Nanowires for Nanoscience and Biotechnology

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Cited by 5 publications
(4 citation statements)
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“…There are bottom-up and top-down methods that are utilized for the fabrication of nanowire sensors. As shown in Figure 1D, the bottom-up methods have been used to grow high-quality nanowires commonly on Si wafers [40]. Although most nanowires are cylindrical in shape, existing bottom-up techniques are capable of varying their cross-sectional shape, producing round, square, and triangular versions [41].…”
Section: Working Principle and Fabrication Processmentioning
confidence: 99%
“…There are bottom-up and top-down methods that are utilized for the fabrication of nanowire sensors. As shown in Figure 1D, the bottom-up methods have been used to grow high-quality nanowires commonly on Si wafers [40]. Although most nanowires are cylindrical in shape, existing bottom-up techniques are capable of varying their cross-sectional shape, producing round, square, and triangular versions [41].…”
Section: Working Principle and Fabrication Processmentioning
confidence: 99%
“…In these regards, printable silicon nanowire field-effect transistor (SiNW FET) sensors represent a great potential for POC biosensors, because they offer the possibility of a cost-efficient wafer-scale production, CMOS compatibility [11], miniaturized integration on a chip, and detection process in real-time [12]. Since the key component of such devices are 1D nanoscale sized elements, the advantages of ultrahigh sensitivity of the measurements down to the fM level [13,14] given by the channel full depletion capability, in combination with the remarkably high signal-to-noise ratio, are achievable.…”
Section: Introductionmentioning
confidence: 99%
“…In these regards, recently proposed integrated nanosensors, i.e., ion-sensitive field effect transistors (ISFETs), offer real-time and ultrasensitive detection of disease markers or pathogens as well as monitoring of multiple physiological parameters, like glucose level or pH . Although the ISFET principle goes back to the 1970s, , it found a new fascinating realization in the past decade with utilizing silicon nanowires (SiNWs) , (Figure b) carbon nanotubes, etc., as sensor building blocks. In comparison with planar semiconducting elements, the performance of nanowire devices, namely the sensitivity, ,,,, is significantly improved by reducing their size and increasing surface-to-volume ratio .…”
mentioning
confidence: 99%
“…Although the ISFET principle goes back to the 1970s, , it found a new fascinating realization in the past decade with utilizing silicon nanowires (SiNWs) , (Figure b) carbon nanotubes, etc., as sensor building blocks. In comparison with planar semiconducting elements, the performance of nanowire devices, namely the sensitivity, ,,,, is significantly improved by reducing their size and increasing surface-to-volume ratio . Silicon nanowire-based FETs reveal great electrical characteristics with high output current and low power dissipation ,, and are CMOS compatible. , While being an excellent candidate for integration as transducers for pH or biomarkers detection in single liquid phase conditions, , to our knowledge SiNW FETs have not been combined with the multiphase droplet-based approach so far.…”
mentioning
confidence: 99%