Kondo states of Yb4Sb3 and Yb4As3

Kwon, Y.S.; Ochiai, Akira; Kitazawa, Hideaki; Sato, Noriaki; Abe, Hisashi; Nanba, Tokuro; Ikezawa, Mikihiko; Takegahara, Katsuhiko; Sakai, Osamu; Suzuki, Takashi; Kasuya, T.

doi:10.1016/0304-8853(87)90480-x

Cited by 21 publications

(6 citation statements)

References 3 publications

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“…The optical measurements [416,417] show a strong temperature dependence of the optical reflectivity in the far infrared energy region below 10 meV. The plasma frequency ω p derived from optical measurements [418] is very small. It varies from 0.08 eV for 10 K to 0.14 eV for 70 K indicating again an extremely small carrier number.…”

Section: Yb 4 As 3 and Related Compoundsmentioning

confidence: 94%

“…The electronic structure of Yb 4 As 3 has been investigated experimentally by means of photoemission [414], Xray bremsstrahlung isochromat spectroscopy [415], optical properties [416][417][418]. The optical measurements [416,417] show a strong temperature dependence of the optical reflectivity in the far infrared energy region below 10 meV.…”

Section: Yb 4 As 3 and Related Compoundsmentioning

confidence: 99%

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Electronic Structure of Strongly Correlated Systems

Antonov

Bekenov

Yaresko

2011

Advances in Condensed Matter Physics

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The article reviews the rich phenomena of metal-insulator transitions, anomalous metalicity, taking as examples iron and titanium oxides. The diverse phenomena include strong spin and orbital fluctuations, incoherence of charge dynamics, and phase transitions under control of key parameters such as band filling, bandwidth, and dimensionality. Another important phenomena presented in the article is a valence fluctuation which occur often in rare-earth compounds. We consider some Ce, Sm, Eu, Tm, and Yb compounds such as Ce, Sm and Tm monochalcogenides, Sm and Yb borides, mixed-valent and charge-ordered Sm, Eu and Yb pnictides and chalcogenides R4X3and R3X4(R = Sm, Eu, Yb; X = As, Sb, Bi), intermediate-valence YbInCu4and heavy-fermion compounds YbMCu4(M = Cu, Ag, Au, Pd). Issues addressed include the nature of the electronic ground states, the metal-insulator transition, the electronic and magnetic structures. The discussion includes key experiments, such as optical and magneto-optical spectroscopic measurements, x-ray photoemission and x-ray absorption, bremsstrahlung isochromat spectroscopy measurements as well as x-ray magnetic circular dichroism.

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Section: Yb 4 As 3 and Related Compoundsmentioning

confidence: 94%

Section: Yb 4 As 3 and Related Compoundsmentioning

confidence: 99%

Electronic Structure of Strongly Correlated Systems

Antonov

Bekenov

Yaresko

2011

Advances in Condensed Matter Physics

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“…The optical measurements [117,118] show a strong temperature dependence of the optical reflectivity in the far infra-red energy region below 10 meV. The plasma frequency ω p derived from optical measurements [119] is very small. It varies from 0.08 eV for 10 K to 0.14 eV for 70 K once more indicating an extremely small carrier number.…”

Section: Yb 4 Asmentioning

confidence: 94%

“…The carrier density in Yb 4 As 3 at a low temperature is extremely low, for which the following findings give evidence: (1) a large value of the resistivity up to 10 mΩ [100], (2) a very low plasma frequency obtained from optical reflectivity [119], (3) a large value of the Hall coefficient [100] which corresponds to about 0.001 holes per Yb 3+ ion, assuming the single carrier model. Yb 4 As 3 is a compensated semimetal, so the number of As p holes exactly equals the number of excess Yb 4f electrons in the partially filled 4f hole level.…”

Section: Yb 4 Asmentioning

confidence: 95%

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Electronic Structure of Mixed Valent Systems

Antonov¹,

Shpak²,

Yaresko³

2004

Condens. Matter Phys.

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The electronic structure of Tm and Sm monochalcogenides, SmB 6 and Yb 4 As 3 is theoretically investigated from the first principles, using the fully relativistic Dirac LMTO band structure method. The electronic structure is obtained using the local spin-density approximation (LSDA), as well as the so-called LSDA+U approach. While the standard LSDA approach is incapable of correctly describing the electronic structure of such materials due to the strong on-site Coulomb repulsion, the LSDA+U approach is remarkably accurate in providing a detailed agreement with experiment for a number of properties.

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1.2.3.2.1 Ln{4}X{3} pnictides with anti-Th{3}P{4} structure

Suski¹,

Palewski²

Pnictides and Chalcogenides II (Binary Lanthanide Polypnictides and Polychalcogenides)

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Kondo states of Yb4Sb3 and Yb4As3

Cited by 21 publications

References 3 publications

Electronic Structure of Strongly Correlated Systems

Electronic Structure of Strongly Correlated Systems

Electronic Structure of Mixed Valent Systems

1.2.3.2.1 Ln{4}X{3} pnictides with anti-Th{3}P{4} structure

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