Kinetics of platinum silicide formation during rapid thermal processing

Pant, A.; Murarka, S. P.; Shepard, C.; Lanford, W. A.

doi:10.1063/1.351654

Cited by 39 publications

(13 citation statements)

References 12 publications

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“…7F and the calculated activation energy is 1.23 eV. This value is slightly lower than the previously calculated activation energy for the formation of platinum silicide, [60][61][62] which can be explained by the high solubility of silicon atoms in gold.…”

Section: Kinetics For the Formation Of Gold Silicidecontrasting

confidence: 58%

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Morphological evolution of gold nanoparticles on silicon nanowires and their plasmonics

Shi

Gupta

et al. 2015

RSC Adv.

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One-dimensional heterostructures composed of silicon (Si) nanowires and uniformly decorated with gold (Au) nanoparticles were fabricated and used as a substrate for organic detection based on the surfaceenhanced Raman spectroscopy. Si nanowires were grown via a silane-based chemical vapor deposition approach. The controlled decoration of Au nanoparticles on the Si nanowires was achieved using wetchemical nucleation and followed by a thermal treatment process. Various annealing parameters were studied to control the shape, size, and surface dispersion of Au nanoparticles on the heterostructures.Microscopic methods were used to evaluate the configuration or morphological evolution (size, interparticle spacing and density) of nanoparticles at different annealing conditions. The influence of annealing on the chemical composition of Au nanoparticles were analyzed using X-ray photoelectron spectroscopy (XPS) and the phase transformation kinetics was also studied. Finally, surface-enhanced Raman spectroscopy was used to sense organic species and this was studied for various morphologies of nanowire heterostructures.

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Section: Kinetics For the Formation Of Gold Silicidecontrasting

confidence: 58%

“…7E). 60,61 These linear plots further indicate that the formation of AuSi x is controlled by the Si diffusion process and thus the following Arrhenius equation can be used to describe the activation energy (E a ) of this diffusion process. 62…”

Section: Kinetics For the Formation Of Gold Silicidementioning

confidence: 98%

Morphological evolution of gold nanoparticles on silicon nanowires and their plasmonics

Shi

Gupta

et al. 2015

RSC Adv.

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“…The annealing of platinum over a silicon substrate can generate three types of compositions: PtSi, Pt 2 Si and Pt 3 Si 55 , 56 . Only the first two forms are stable at room temperature (RT) 24 .…”

Section: Methodsmentioning

confidence: 99%

Electronic contribution in heat transfer at metal-semiconductor and metal silicide-semiconductor interfaces

Hamaoui

Horny

Hua

et al. 2018

Sci Rep

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This work presents a direct measurement of the Kapitza thermal boundary resistance Rth, between platinum-silicon and platinum silicide-silicon interfaces. Experimental measurements were made using a frequency domain photothermal radiometry set up at room temperature. The studied samples consist of ≈50 nm of platinum and ≈110 nm of platinum silicide on silicon substrates with different doping levels. The substrate thermal diffusivity was found via a hybrid frequency/spatial domain thermoreflectance set up. The films and the interfaces between the two layers were characterized using scanning electron microscopy, transmission electron microscopy and energy-dispersive X-ray spectroscopy. X-ray diffraction was also used to determine the atomic and molecular structures of the samples. The results display an effect of the annealing process on the Kapitza resistance and on the thermal diffusivities of the coatings, related to material and interface changes. The influence of the substrate doping levels on the Kapitza resistance is studied to check the correlation between the Schottky barrier and the interfacial heat conduction. It is suggested that the presence of charge carriers in silicon may create new channels for heat conduction at the interface, with an efficiency depending on the difference between the metal’s and substrate’s work functions.

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“…In contrast, when the DDS is Si, Kirkendall voids can form at the silicon-silicide interface [16]. Platinum silicide, a metallurgically similar candidate silicide of broad interest [17,18], forms both dimetal and monosilicide phases at low temperature [19]. In contrast, the large difference between the formation temperatures of Pd 2 Si (250 °C) and PdSi (820 °C) [20,21] ensures a well-controlled reaction where Pd will remain the DDS.…”

Section: Introductionmentioning

confidence: 99%

Low-Resistance, High-Yield Electrical Contacts to Atom Scale Si:P Devices Using Palladium Silicide

et al. 2019

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Scanning tunneling microscopy (STM) enables the fabrication of two-dimensional δ-doped structures in Si with atomistic precision, with applications from tunnel field-effect transistors to qubits. The combination of a very small contact area and the restrictive thermal budget necessary to maintain the integrity of the δ layer make developing a robust electrical contact method a significant challenge to realizing the potential of atomically precise devices. We demonstrate a method for electrical contact using Pd2Si formed at the temperature of silicon overgrowth (250 °C), minimizing the diffusive impact on the δ layer. We use the transfer length method to show our Pd2Si contacts have very high yield (99.7% +0.2% −1.5%) and low resistivity (272±41Ωμm) in contacting mesa-etched Si:P δ layers. We also present three terminal measurements of low contact resistance (<1 kΩ) to devices written by STM hydrogen depassivation lithography with similarly high yield (100% +0% −3.2%).

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Kinetics of platinum silicide formation during rapid thermal processing

Cited by 39 publications

References 12 publications

Morphological evolution of gold nanoparticles on silicon nanowires and their plasmonics

Morphological evolution of gold nanoparticles on silicon nanowires and their plasmonics

Electronic contribution in heat transfer at metal-semiconductor and metal silicide-semiconductor interfaces

Low-Resistance, High-Yield Electrical Contacts to Atom Scale Si:P Devices Using Palladium Silicide

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