Silicide formation in Pt-Si bilayers was induced by rapid isothermal annealing using incoherent light from tungsten halogen lamps. The growth sequence of the Pt2Si and the PtSi phases that evolved as the result of the solid state reaction in the bilayers was monitored by Rutherford backscattering spectroscopy. The identification of the phases was confirmed by x-ray diffraction. Activation energies for the formation of the Pt2Si and the PtSi phase were determined to be 1.38 and 1.67 eV, respectively. These values agree with the reported results of the formation of these silicides by furnace anneals. Hence, rapid isothermal anneals do not appear to enhance the solid-state reactions in Pt-Si bilayers. It was also found that even rapid thermal anneals led to the formation of a very thin oxide that provided protection to the underlying silicide during selective Pt etch.
An investigation of the stability and electrical characteristics of Aluminum-Copper bilayer films on SiO2 has been carried out. In this investigation, a thin layer of sputtered aluminum is used as a diffusion barrier/adhesion promoter between the copper and SiO2. The electrical performance of these structures when subjected to thermal cycles and applied biases is determined. The interactions and diffusion of copper through aluminum into SiO2 was investigated using both blanket films and MOS capacitors. Results are compared with those obtained from structures of Al and Cu metallization on SiO2. Samples were annealed at various temperatures in the range of 200°C to 500°C. Analysis using four-point probe resistivity measurements, X-ray diffraction, and Rutherford Back Scattering were carried out. MOS capacitors are used to establish performance under applied bias. Capacitance-Voltage characteristics of formed alloys are discussed. These results will be presented and discussed in view of the applicability of aluminum as the adhesion promoter for copper interconnections on SiO2.
The formation of PtSi films by rapid thermal processing of e-beam evaporated Pt on <100> Si has been studied. The current study found that PtSi films have the potentially useful property of oxidizing, i.e., forming a surface layer of Si02 which may be useful for patterning. Rapid oxide formation is found with, possibly, linear growth rates when the film is doped with As to 8E15 atoms/cm2 at 80 KeV but insignificant oxidation if the film is undoped or B-doped. Rutherford backscattering analysis shows significant redistribution of the As during silicidation and oxidation with As excluded from the silicide, diffusing to the oxide and especially the oxide surface. Post-silicidation anneals have been done in a conventional tube furnace at 650ºC for up to 60 minutes and form an oxide thickness of up to 200 nm. NiSi films appear stable if Bdoped, oxidize with Ni piling up at the Si02/Si interface if undoped, and are unstable with Ni diffusing deep into the Si if As-doped.
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