Kinetics of hydrogen desorption from germanium-covered Si(100)

Russell, N. M.; Ekerdt, John G.

doi:10.1016/s0039-6028(96)00888-6

Cited by 24 publications

(22 citation statements)

References 62 publications

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“…The β 1 state is due to the decomposition of two silicon monohydride species (SiH), producing β 1 -H 2 and two dangling bonds. The α state is due to desorption of hydrogen from Ge sites. ,,,,, At higher Ge 2 H 6 exposures, the β 1 state nears saturation, and a small yet distinct α state is evident, peaked at 580 K. Integration of the TPD spectra provides a measure of the extent of reaction. The amount of hydrogen that desorbs is then normalized with respect to the saturation coverage of hydrogen present in a monohydride monolayer (equivalent to the number of dangling bonds present on Si(111)), to give the hydrogen coverage, ϑ H , in monolayers.…”

Section: Resultsmentioning

confidence: 99%

“…The use of GeH 4 and Ge 2 H 6 as precursor gases for epitaxial CVD growth of Ge on Si require temperatures greater than the hydrogen desorption temperature, since H 2 desorption is required to liberate the surface sites needed for further reaction of the deposition precursors 51 (at extremely high temperatures adsorption is the rate-limiting step rather than H 2 desorption). Although it is well-known that Ge reduces the desorption temperature of hydrogen from Si, ,,,− high temperatures are still required for efficient epitaxial growth. In the fabrication of electronic devices, high temperatures can cause diffusion and undesirable solid-state reactions to occur.…”

Section: Introductionmentioning

confidence: 99%

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Photoinduced Reaction of Digermane with Si(111)

Batinica

Crowell

1999

J. Phys. Chem. A

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The photoinduced reaction of digermane with the Si(111) surface using ultraviolet irradiation has been studied using temperature-programmed desorption (TPD) and Auger electron spectroscopy (AES). Hydrogen and germane desorption yields and relative Ge/Si AES signals are used to determine the reactivity of digermane. UV irradiation during or after dosing of the Si crystal surface at low temperatures (e120 K) enhances the reactivity of digermane compared to similar doses without UV irradiation. Adsorption and photoexcitation of digermane at 110 K lead to significantly more reaction that at 120 K. We also find that UV irradiation after dosing the Si(111) surface with digermane enhances the reactivity more than simultaneous UV irradiation at 110 K, but the opposite is true at 120 K. Evidence is also found for precursor-mediated adsorption, and this is used to rationalize the dramatic changes with temperature. Photoexcitation of digermane at low temperatures leads initially to deposition of a-Ge:H.

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Photoinduced Reaction of Digermane with Si(111)

Batinica

Crowell

1999

J. Phys. Chem. A

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“…One plausible explanation for a decreased desorption temperature for H 2 has been described in terms of mobility and recombination of hydrogen from both a silicon and germanium site prior to evolution from the surface. 6,7 An alternative explanation involves a weakening of the Si-H bond due to an electronic effect caused by coadsorbed germanium. 8,9 The peak at 610 K in the mass 27 scan is of particular interest.…”

Section: Methodsmentioning

confidence: 99%

Adsorption of triethygermane on Si(100): thermal and nonthermal channels for ethyl ligand removal/dissociation

Brickman

Yeninas

Lozano

et al. 2006

Surf. Interface Anal.

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Adsorption of triethylgemane (TEG) on the Si(100) surface at 100 K has been studied using a variety of surface-sensitive spectroscopies. Thermally and electronically desorbed species were analyzed using temperature-programmed desorption (TPD) and electron-stimulated desorption (ESD) techniques. Electronically desorbed ions (H + ) were analyzed using a time-of-flight technique (TOF) and time evolution studies were conducted on desorbing neutral species. Direct analysis of surface species were carried out using X-ray photoelectron spectroscopy (XPS) and high-resolution electron energy loss (HREELS) spectroscopy. Evidence is offered for (1) an electron-induced channel for direct ethylene desorption via a b-hydride elimination process; (2) an electron-stimulated transfer of ethyl ligands from a Ge to a Si site; and (3) both thermal-and electron-stimulated desorption of methyl groups.

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“…16,17 Procedures for surface preparation and hydrogen atom dosing are described elsewhere. 16,17 Low doped p-type Si͑100͒ with a resistivity of 15-20 ⍀ cm was used. Surface structure was confirmed by low-energy electron diffraction ͑LEED͒.…”

Section: Methodsmentioning

confidence: 99%

Boron-induced stabilization of theSi(100)−(2×1)surface reconstruction

et al. 1999

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The effect of boron on hydrogen uptake, hydride desorption kinetics, and the hydrogen-terminated Si͑100͒ surface reconstruction was investigated at boron coverages expected during in situ chemical vapor deposition. Two dramatic changes in hydrogen adsorption compared to the clean Si͑100͒ surface were observed. Reconstruction to the 3ϫ1 surface at high hydrogen atom exposures was prevented and SiH 2 formation was suppressed at boron coverages of 0.002 ML. Longer-range effects, whereby monohydride formation is reduced, are seen for coverages up to 0.1 ML. Monohydride formation decreased by ϳ15% for 0.02 ML boron. No new hydrogen desorption states were observed with boron coverages up to 0.1 ML. ͓S0163-1829͑99͒03424-4͔ PHYSICAL REVIEW B 15 JUNE 1999-I VOLUME 59, NUMBER 23 PRB 59 0163-1829/99/59͑23͒/15225͑5͒/$15.00 15 225

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Kinetics of hydrogen desorption from germanium-covered Si(100)

Cited by 24 publications

References 62 publications

Photoinduced Reaction of Digermane with Si(111)

Photoinduced Reaction of Digermane with Si(111)

Adsorption of triethygermane on Si(100): thermal and nonthermal channels for ethyl ligand removal/dissociation

Boron-induced stabilization of theSi(100)−(2×1)surface reconstruction

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