Abstract:Adsorption of triethylgemane (TEG) on the Si(100) surface at 100 K has been studied using a variety of surface-sensitive spectroscopies. Thermally and electronically desorbed species were analyzed using temperature-programmed desorption (TPD) and electron-stimulated desorption (ESD) techniques. Electronically desorbed ions (H + ) were analyzed using a time-of-flight technique (TOF) and time evolution studies were conducted on desorbing neutral species. Direct analysis of surface species were carried out using … Show more
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