Si(100)-(2ϫ1) was exposed to gas-phase atomic hydrogen, H(g), at various substrate temperatures T s between 115 and 300 K. No low-energy electron diffraction patterns could be obtained from such hydrogenated surfaces. In temperature-programmed desorption measurements, SiH x (xϭ1-3) radical species as well as SiH 4 desorbed at T s between 600 and 1000 K, in addition to  1-and  2-H 2 desorption peaks. Combined together, the results indicate that amorphous hydrogenated silicon (a-Si:H) films are formed. While surface etching competes, a-Si:H formation dominates. Once formed, a-Si:H further suppresses etching.
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