Low-temperature Si(100) etching: facile abstraction of SiH3(a) by thermal hydrogen atoms

Jo, Sung-Kee; Gong, Bengen; Hess, G. B.; White, John; Ekerdt, John G.

doi:10.1016/s0039-6028(97)00801-7

Cited by 26 publications

(24 citation statements)

References 26 publications

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“…We thus conclude that H(g) atoms, when exposed to Ge(100) at T s below 300 K, not only form surface GeH x (a) (x > 1) species but also abstract GeH 3 (a) to produce the gaseous etch product GeH 4 from Ge(100) during H(g) dose. A very similar behavior was observed on Si(100), although the threshold T s is about 200 K lower on Ge(100) [8][9][10][11][16][17][18]31]. It should be noted that the β 2 -H 2 peak grows at the sacrifice of the β 1 -H 2 peak with decreasing T s : The β 1 -peak intensity decreased by ~33% when T ads decreased from 450 K to 120 K. This suggests that the increase of the total H 2 desorption with decreasing T ads was due to the increased concentration of increased diand tri-hydrides on the surface, rather than to etchinginduced roughening and a subsequent increase in the area of the surface.…”

Section: Resultssupporting

confidence: 72%

“…Together with the 500-K GeH 4 desorption (See the right panel of Figure 3), the strong β 2 -H 2 peak intensities obtained with T s ≤ 300 K indicate the formation of surface multi-hydrides GeH x (a) (x = 2 and 3) and surface etching. It was previously shown that Si etching via SiH 3 (a)-by-H(g) abstraction during H(g) dose also occurs at adsorption T s that leads to strong β 2 -H 2 and SiH 4 desorption in TPD [8][9][10]31]. The detection of GeH 4 TPD peak at 490 K, resulting from the recombination of two surface adsorbates, SiH 3 (a) and H(a), suggests that SiH 3 (a) species are formed and abstracted by H(g) during the H(g) dose.…”

Section: Resultsmentioning

confidence: 99%

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Surface Reactions of Atomic Hydrogen with Ge(100) in Comparison with Si(100)

2017

Appl. Sci. Converg. Technol.

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The reactions of thermal hydrogen atoms H(g) with the Ge(100) surface were examined with temperatureprogrammed desorption (TPD) mass spectrometry. Concomitant H 2 and CH 4 TPD spectra taken from the H(g)irradiated Ge(100) surface were distinctly different for low and high H(g) doses/substrate temperatures. Reactions suggested by our data are: (1) adsorbed mono(β 1)-/di-hydride(β 2)-H(a) formation; (2) H(a)-by-H(g) abstraction; (3) GeH 3 (a)-by-H(g) abstraction (Ge etching); and (4) hydrogenated amorphous germanium a-Ge:H formation. While all these reactions occur, albeit at higher temperatures, also on Si(100), H(g) absorption by Ge(100) was not detected. This is in contrast to Si(100) which absorbed H(g) readily once the surface roughened on the atomic scale. While this result is rather against expectation from its weaker and longer Ge-Ge bond as well as a larger lattice constant, we attribute the absence of direct H(g) absorption to insufficient atomic-scale surface roughening and to highly efficient subsurface hydrogenation at moderate (>300 K) and low (≤300 K) temperatures, respectively.

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Section: Resultssupporting

confidence: 72%

Section: Resultsmentioning

confidence: 99%

Surface Reactions of Atomic Hydrogen with Ge(100) in Comparison with Si(100)

2017

Appl. Sci. Converg. Technol.

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“…Trideuteride formation was observed on silicon nanocrystals at a dosing temperature of 375 K. On Si͑100͒ trihydride formation is reported at dosing temperatures of 480 K, and trihydride formation is enhanced at low dosing temperatures ͑Ͻ250 K͒. 16,17 With continued atomic H ͑or D͒ exposure, Si͑100͒ begins to amorphize. Kang et al 18 reported the suppression of etching products at high doses as an indication of amorphization of the Si surface.…”

Section: Influence Of Surface Chemistry On Photoluminescence From Deumentioning

confidence: 99%

Influence of surface chemistry on photoluminescence from deuterium-passivated silicon nanocrystals

Salivati

Shuall²,

Baskin³

et al. 2009

Journal of Applied Physics

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“…6,25 The abstraction probability of SiH 3 on Si͑100͒ increases by a factor of 6 in the temperature range between 150 and 500 K, whereas the supply of silyl groups by insertion of H into Si-Si bonds of the Si͑100͒ substrate slows down with increasing temperature. 3͒ observed in the present study very closely resembles the temperature dependence of the silyl abstraction on Si͑100͒ surfaces.…”

Section: B Hydrogen Atom Induced Etching Of A-si:hmentioning

confidence: 99%

Thermal stability and hydrogen atom induced etching of nanometer-thick a-Si:H films grown by ion-beam deposition on Si(100) surfaces

Biener

Lutterloh

Wicklein

et al. 2003

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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Absorption of gas-phase atomic hydrogen by Si (100): Effect of surface atomic structures Appl. Phys. Lett. 79, 36 (2001); 10.1063/1.1379989Hydrogen-plasma etching of ion beam deposited c-BN films: An in situ investigation of the surface with electron spectroscopy Amorphous hydrogenated silicon ͑a-Si:H͒ films in the thickness range 0.1-4.5 nm were deposited on Si͑100͒ surfaces at 350 K using the ion-beam-deposition method. The thermal stability of these a-Si:H films was studied by temperature programmed desorption spectroscopy. The films are stable up to 500 K, where a-Si:H starts to decompose via evolution of hydrogen (H 2 ) and silane (SiH 4 ). Approximately 99% of the hydrogen initially bound to the Si network was detected in the hydrogen channel. The hydrogen evolution peaks at ϳ780 K caused by the decomposition of monohydride groups; the presence of SiH 2 groups is indicated by hydrogen desorption below 700 K. The silane desorption states at 625 and 750 K reveal the existence of two different types of silyl (SiH 3 ) groups. Etching of a-Si:H by impinging gas-phase H atoms was investigated in the temperature range from 150 to 700 K by in situ mass spectrometry. Silane was the sole etch product observed. The formation of silane proceeds via direct abstraction of silyl precursor groups by impinging hydrogen atoms, SiH 3 (a)ϩH(g)→SiH 4 (g); the silyl abstraction probability increases by a factor of 6 with increasing substrate temperature between 150 and 525 K. However, the steady-state erosion rate is controlled by the supply of silyl groups by successive hydrogenation of the Si network with the formation of SiH 2 as bottleneck of the silyl supply.

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Low-temperature Si(100) etching: facile abstraction of SiH3(a) by thermal hydrogen atoms

Cited by 26 publications

References 26 publications

Surface Reactions of Atomic Hydrogen with Ge(100) in Comparison with Si(100)

Surface Reactions of Atomic Hydrogen with Ge(100) in Comparison with Si(100)

Influence of surface chemistry on photoluminescence from deuterium-passivated silicon nanocrystals

Thermal stability and hydrogen atom induced etching of nanometer-thick a-Si:H films grown by ion-beam deposition on Si(100) surfaces

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