2002
DOI: 10.1103/physrevlett.88.105507
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Key to Understanding InterstitialH2in Si

Abstract: A new IR absorption line at 3191.1 cm(-1) has been discovered for the interstitial HD molecule in Si. This new line appears for sample temperatures above approximately 20 K and lies 73.9 cm(-1) below the 3265.0 cm(-1) line previously observed for HD. We attribute the 73.9 cm(-1) energy difference to the rotation of the interstitial HD molecule. The selection rules associated with these two lines are consistent with the puzzling absence of an ortho-para splitting in the IR absorption spectra of H2 and D2 in Si.

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Cited by 68 publications
(95 citation statements)
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“…IR spectra of such systems are usually broad because of inhomogeneities in the system or because of random molecular collisions. As an exception, narrow lines are observed in semiconductor crystals [77] and solid hydrogen [78].…”
Section: (B) Model Hamiltonian Of H 2 @C 70mentioning
confidence: 97%
“…IR spectra of such systems are usually broad because of inhomogeneities in the system or because of random molecular collisions. As an exception, narrow lines are observed in semiconductor crystals [77] and solid hydrogen [78].…”
Section: (B) Model Hamiltonian Of H 2 @C 70mentioning
confidence: 97%
“…6 Hydrogen passivation of B in Si is very efficient because the Coulomb attraction between interstitial H + and B − results in a very large capture radius. 7 Thus, almost all B in Si can be passivated by H. 8,9 With increasing concentration of H, hydrogen molecules [10][11][12][13][14] and extended planar defects called platelets 9,15,16 are formed. Furthermore, additional H-͓or deuterium ͑D͔͒ related Raman peaks are observed in the range of 1900-2300 ͑1300-1700͒ cm −1 .…”
Section: Introductionmentioning
confidence: 99%
“…• Silicon, which is known to incorporate hydrogen molecules 12 although only in low concentrations. A problem is its very low conductivity.…”
Section: Active Materials Requirementsmentioning
confidence: 99%