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Hydrogen has a strong influence on the electrical properties of transparent conducting oxides where it can give rise to shallow donors and can passivate deep compensating defects. We have carried out infrared absorption experiments on H- and D-doped β-Ga2O3 that involve temperature- and polarization-dependent effects as well as relative H- and D-concentrations to probe the defect structures that hydrogen can form. The results of analysis of these data, coupled with detailed theoretical calculations, show that the dominant O-H vibrational line observed at 3437 cm−1 for hydrogenated Ga2O3 is due to a relaxed VGa-2H center.

A new IR absorption line at 3191.1 cm(-1) has been discovered for the interstitial HD molecule in Si. This new line appears for sample temperatures above approximately 20 K and lies 73.9 cm(-1) below the 3265.0 cm(-1) line previously observed for HD. We attribute the 73.9 cm(-1) energy difference to the rotation of the interstitial HD molecule. The selection rules associated with these two lines are consistent with the puzzling absence of an ortho-para splitting in the IR absorption spectra of H2 and D2 in Si.

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