Formation of hydrogen-boron complexes in boron-doped silicon treated with a high concentration of hydrogen atoms

Abstract

The formation of hydrogen ͑H͒ related complexes and their effect on boron ͑B͒ dopant were investigated in B-ion implanted and annealed silicon ͑Si͒ substrates treated with a high concentration of H. Isotope shifts by replacement of 10 B with 11 B were observed for some H-related Raman peaks, but not for other peaks. This shows proof of the formation of B-H complexes in which H directly bonds to B in Si. This is an experimental result concerning the formation of B-H complexes with H bonded primarily to B. Electrical resistivity measurements showed that the B acceptors are passivated via the formation of the observed B-H complexes, as well as the well-known passivation center in B-doped Si; namely, the H-B passivation center.

Dopant dependence on passivation and reactivation of carrier after hydrogenation

“…The peak at 1873 cm −1 is due to the well-known H-B passivation center. The peaks at 2283, 2376, 2387, and 2470 cm −1 were assigned in our previous study 21 to the B-H stretching mode of B-H complexes in which H atoms directly bond with B atoms. 21 The other peaks at 1931, 2105, 2134, 2222, and 2241 cm −1 are due to Si-H stretching modes of defects formed by hydrogenation.…”

“…The peaks at 2283, 2376, 2387, and 2470 cm −1 were assigned in our previous study 21 to the B-H stretching mode of B-H complexes in which H atoms directly bond with B atoms. 21 The other peaks at 1931, 2105, 2134, 2222, and 2241 cm −1 are due to Si-H stretching modes of defects formed by hydrogenation. 21 Notably, the peak at 2134 cm −1 is due to the Si-H stretching mode of platelets, 16,17,22 which are known as hydrogen-related planar defects in Si.…”

“…18,19 Furthermore, H multiple trapping centers are formed in heavily H-and B-doped Si. 20,21 Recently, some of them have been assigned to B-H complexes in which multiple H atoms are trapped, and at least one of them directly bonds to the B in Si. 21 The effect of the B-H complexes on B dopants such as passivation has been investigated in our previous work, 21 whereas the recovery of B dopants by the dissociation of H atoms from the complexes has not yet been investigated.…”

“…20,21 Recently, some of them have been assigned to B-H complexes in which multiple H atoms are trapped, and at least one of them directly bonds to the B in Si. 21 The effect of the B-H complexes on B dopants such as passivation has been investigated in our previous work, 21 whereas the recovery of B dopants by the dissociation of H atoms from the complexes has not yet been investigated. As for n-type Si, neither the formation of such H multiple trapping centers nor their effect on n-type dopants has been investigated.…”

“…The details of the hydrogenation procedure and conditions are reported elsewhere. 8,21 Raman scattering measurements were performed at RT with a 514.5 nm excitation beam at a power of 100 mW. Resistivity measurements were performed at RT using four-point probe measurements.…”