Junction and ohmic contact formation in compound semiconductors by rapid isothermal processing

Abstract

The results of a new application of rapid isothermal processing (RIP) for the junction and ohmic contact formation in compound semiconductors are presented in this paper. In this process, for a particular compound semiconductor a compound is selected so that one element acts as a dopant and the other is one element of the compound semiconductor preferably a high vapor pressure element. A thin layer of this compound is deposited by suitable technique on top of the compound semiconductor followed by low-temperature (∼300–500 °C) RIP step. Results of indium phosphide and cadmium telluride are presented representing group III–V and II–VI, respectively. Preliminary results of CuInSe2 are also presented. This method does not require a sealed quartz ampoule, a capping layer, or a background pressure of high vapor pressure element of the compound semiconductor, as is required in diffusion of most compound semiconductors. This process has resulted in abrupt and shallow junctions having excellent diode characteristics.